Schottky diode in HV CMOS smart power technology and its demonstration for charge pump application

Hadzi-Vukovic, J.; Jevtic, M.M.; Rothleitner, H.; Croce, Paolo; Ladurner, Markus; Wachter, F.

doi:10.1109/smicnd.2005.1558793

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“…Moreover, the percentage of substrate injected current can reach 1.6% in LJPR at high current injection. On the other side, J R is two orders of magnitude larger in JTPR1 compared to LJPR, though the J R level in JTPR1 is still far below the existing SPR devices [2,3].…”

Section: Figure-of-meritmentioning

confidence: 88%

“…The isolation of JPR is a main concern in bulk Smart Power technologies due to the undesired parasitic effects. To overcome the problems associated with lack of isolation, Schottky Power Rectifier (SPR) are currently proposed for some applications [2]. In fact, SPR is the dominant rectifier for low and medium voltage applications (up to 300V) because of its low forward voltage (V F ) and short reverse recovery time (t RR ).…”

Section: Introductionmentioning

confidence: 99%

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