High-Voltage trenched rectifiers for Smart Power technology

Abstract

High-Voltage Junction and Schottky Trenched PowerRectifiers (HV-JTPR and STPR) are fabricated and analyzed in this paper for 70V to 100V reverse voltage applications. Resulting from their combination, an innovative hybrid device (HTPR), with alternated Schottky/Junction fingers, is a proper solution to control the trade-off between the losses in forward and reverse modes.

Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications

“…Nevertheless, the existence of trenches can generate additional J R due to defects. This was the case of JTPR with thick oxide at the top, as found in [3], whose J R is shown in Fig. 2.…”

“…While V F remains the same in STPR/HTPR, a V F decrement with T occurs in JTPR, thus yielding to break the Schottky limit (gray lines) at high T . In the past, conventional lateral-junction power rectifiers (LJPR), as described in [3], evidenced a worse J R -V F performance due to the accentuated J R degradation with T .…”

“…This letter is focused on TPR with a BV between 70 and 100 V to accomplish tasks of freewheeling, switching, and blocking in integrated circuits for automotive electronics. A first attempt to integrate TPR in smart-power technology was reported in [3], comparing Schottky (STPR), junction (JTPR), and hybrid (HTPR) structures. Aside from showing good isolation characteristics, their forward voltage (V F ) at a fixed current density (J F ) and their reverse current density (J R ) were demonstrated to be in accordance with the state-of-the-art discrete TPR.…”

“…1). The thermal budget is also optimized to reduce J R in JTPR with thick oxide at the top [3]. Manuscript (1), is also displayed.…”