2017
DOI: 10.1016/j.apsusc.2017.01.142
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Schottky diode behaviour with excellent photoresponse in NiO/FTO heterostructure

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Cited by 71 publications
(17 citation statements)
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“…The Tauc plot for a 30 nm thick layer (see Figure b) confirms the direct band gap as the exponential factor k in ( αhν ) k is equal to k = 2. The corresponding band‐gap energy of the NiO x is around 3.7 eV, which is in good agreement with values from the literature . Thus, based on XRD and the band‐gap energy, the formation of a relatively pure nickel oxide matrix close to its stoichiometric composition can be concluded.…”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…The Tauc plot for a 30 nm thick layer (see Figure b) confirms the direct band gap as the exponential factor k in ( αhν ) k is equal to k = 2. The corresponding band‐gap energy of the NiO x is around 3.7 eV, which is in good agreement with values from the literature . Thus, based on XRD and the band‐gap energy, the formation of a relatively pure nickel oxide matrix close to its stoichiometric composition can be concluded.…”
Section: Resultssupporting
confidence: 88%
“…In particular, no pure crystalline nickel phases are apparent by XRD, which agrees well to the results of the XPS study. [63,64] Thus, based on XRD and the band-gap energy, the formation of a relatively pure nickel oxide matrix close to its stoichiometric composition can be concluded. In order to be able to detect weaker diffraction peaks, a comparatively thick layer with a thickness of 400 nm was used.…”
Section: Fundamental Characteristics Of Electron Beam Evaporated Nickmentioning
confidence: 97%
“…The optical bandgap which is calculated with the help of Talc's plot by extrapolating the straight line part of the curves at =0, is shown in Figure (c). The direct bandgap for NiO nanofibers is found to be 3.3 eV, which is consistent with the previous reports …”
Section: Resultssupporting
confidence: 92%
“…The valence band maximum of NiO x lies around 5 eV vs. vacuum level. With a ≈ 3.5 eV large bandgap, NiO x can efficiently transports holes extracted from MAPbI 3 but blocks the backflow of electrons . Moreover, the carrier mobility of NiO x is relatively high at around ≈0.5 cm 2 V −1 s −1 , which enables fast hole transport and slow recombination.…”
Section: Introductionmentioning
confidence: 99%