Schottky diode-based microwave limiter with adjustable threshold power level

Bera, Subhash Chandra; Basak, Koushik; Jain, Varunika; Singh, Rajendra; Garg, Vaibhav

doi:10.1002/mop.25255

Cited by 25 publications

(7 citation statements)

References 6 publications

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“…Finally, a multi-stage limiter based on GaN PiN diodes and GaN SBDs can reduce the leakage power and adjust the threshold level [26]. Monolithic and microwave integrated circuits (MMICs) offer the possibility of integrating the multi-stage diode limiter, enabling a better limiting performance with high power handling at a high-frequency band.…”

Section: Discussionmentioning

confidence: 99%

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

et al. 2021

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Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a microwave power limiter for the first time. The fabricated SBD achieved a very low differential specific on-resistance (RON,sp) of 0.21 mΩ·cm2, attributed to the steep-mesa technology, which assists in reducing the spacing between the edge of the anode and cathode to 2 μm. Meanwhile, a low leakage current of ~10−9 A/cm2@−10 V, a high forward current density of 9.4 kA/cm2 at 3 V in DC, and an ideality factor of 1.04 were achieved. Scattering parameter measurements showed that the insertion loss (S21) was lower than −3 dB until 3 GHz. In addition, a microwave power limiter circuit with two anti-parallel diodes was built and measured on an alumina substrate. The input power level reached 40 dBm (10 watts) in continuous-wave mode at 2 GHz, with a corresponding leakage power of 27.2 dBm (0.5 watts) at the output port of the limiter, exhibiting the great potential of GaN SBD in microwave power limiters.

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Section: Discussionmentioning

confidence: 99%

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

et al. 2021

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“…To achieve a radiofrequency power limiter, many scientific researches have been proposed for the design of power limiters based on PIN diodes, Schottky diodes, and MESFET transistors. The utilization of semiconductor diodes for limiting microwave power has been recently discussed in several published studies . Depending on the chosen diode components, the power limiters can be grouped as passive and active limiters.…”

Section: Introductionmentioning

confidence: 99%

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

Sardi

Alkurt

Özkaner

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, a new design of microstrip power limiter which is based on microstrip technology and zero bias Schottky diode is introduced. In this context, the FR-4 substrate that was characterized by dielectric permittivity (4.4), dielectric thickness (1.6 mm), and the HSMS 286k Schottky diode is used to design the proposed power limiter. The planar resonators are designed, optimized, and simulated with the shunting of the HSMS 286k diodes by using Schematic solver integrated in ADS from Agilent Technologies. The simulation results are significant in terms of high impedance matching, strong insertion of the low power, and good limitation ratio of the high power. The proposed power limiter is fabricated and tested in the measurement part. It is observed that the results are in agreement with the numerical analysis in terms of matching, isolation, and power limitation. The achieved microwave power limiter offers simple construction, small size (44 × 40 mm 2 ), wide bandwidth, and good limitation ratio less than 10 dBm when the input power reaches 30 dBm. K E Y W O R D SADS library, microstrip, microwave power, short stubs, zero bias Schottky diode

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“…In Microwave systems, Power limiters prevent high incident signal from saturating or damaging sensitive receivers such as rectenna systems and low noise amplifier [1][2][3][4][5] and also allow the receiver to function properly in presence of small signals. The most used limiter technologies are based on solid state components such as PIN diodes [6][7][8], FET transistors [9][10][11][12], and Schottky diodes [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A new structure of a wide band bridge power limiter

Echchakhaoui¹,

Abdelmounim²,

Zbitou³

et al. 2020

IJECE

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In this work, new design and simulation of a microstrip power limiter based on Schottky diode is presented. The proposed circuit is a zero bias power limiter built by associating a transmission line in parallel to a four Schottky rectifier bridge circuit. The first circuit using a single stage rectifier is analyzed and simulated. To improve this single stage, a second and final limiter is designed with two stages rectifier. Simulation results for the final circuit show an ideal limiter behavior and good performance of limiting rate up to 20dB for a threshold input power varying from 5 dBm to 30 dBm. While insertion loss remains low at small signal.

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Schottky diode-based microwave limiter with adjustable threshold power level

Abstract: doped fiber laser with 440W of continuous wave output power, Chin J

Cited by 25 publications

References 6 publications

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

A new structure of a wide band bridge power limiter

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