Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN

Monroy, E.; Calle, F.; Muñoz, E.; Beaumont, B.; Omnès, F.; Gibart, P.

doi:10.1002/(sici)1521-396x(199911)176:1<141::aid-pssa141>3.0.co;2-9

Cited by 21 publications

(24 citation statements)

References 13 publications

(19 reference statements)

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“…This value is close to the results of Refs. [3] and [4]. Furthermore, the surface of GaN is not illuminated by VUV light directly because the area of Au transparent electrode is larger than the beam size.…”

Section: Resultsmentioning

confidence: 99%

“…However, light sensitivity often deteriorates due to radiation damage in the vacuum ultraviolet (VUV) region. Several groups have reported on GaN-or AlGaN-based UV detectors such as photoconductor [1], the Schottky type [2][3][4][5] , the Schottky-based metal-semiconductor-metal type [6,7], p-n or p-i-n type [8][9][10] have been reported. They have good responsivity from 250 to 360 nm and clear cut-off characteristics at a cut-off wavelength of l c = 360 nm.…”

mentioning

confidence: 99%

“…Using 50 A Pd as a Schottky barrier on n-type GaN, Chen et al [3] reported a responsivity of 0.18 A/W. Monroy et al [4] reported Schottky barrier UV photodetectors using Au electrode on epitaxial lateral overgrown GaN. However, there are few reports on the responsivity spectra in the VUV region (l < 200 nm) [5].…”

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confidence: 99%

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Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Motogaito

Ohta

Hiramatsu

et al. 2001

phys. stat. sol. (a)

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The characterization of Schottky type ultraviolet (UV) detectors with transparent electrode between vacuum ultraviolet (VUV) and visible light region using synchrotron radiation is described. The responsivity spectrum of the detectors at 0 V bias was obtained in the wide range between 2 eV (563 nm) and 25 eV (50 nm). The photoemission current from Au electrode was able to be canceled by improving the measuring circuit, and thus we succeeded in operating the detectors without any photoemission current from Au and GaN. The responsivity of the detectors is about 0.15 A/W at 3.5 eV. These results show that these Schottky type detectors with the transparent electrode are effective to detect VUV-UV light (50-360 nm, 3.4-25 eV) without any photoemission.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Motogaito

Ohta

Hiramatsu

et al. 2001

phys. stat. sol. (a)

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“…Reduction of threading dislocation density (TDD) can improve photodetector performance, particularly speed, cutoff and leakage currents [9,[11][12][13]. Pernot et al [11] found that leakage current could be reduced to very low levels when only mixed character dislocations were eliminated.…”

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confidence: 99%

Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate

Parish

Hansen

Moran

et al. 2001

phys. stat. sol. (a)

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“…Ideal photovoltaic devices are not expected to exhibit gain. One of the issues yet unexplained in GaN based Schottky UV detectors, has been the presence of gain [1,2]. Presently, the III-nitride films are grown hetero-epitaxially on mismatched substrates [3].…”

mentioning

confidence: 99%

Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism

Katz

Garber

Meyler

et al. 2001

phys. stat. sol. (a)

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We have implemented Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration. The devices exhibit a high gain at both reverse and forward bias. The gain mechanism is attributed to trapping of minority carriers at the semiconductor-metal interface, with excellent agreement between the calculated responsivity and the experiment. However, the vertical detector zero-bias responsivity (without gain) is two orders of magnitude higher. This is attributed to improved ohmic back contacts, due to the highly doped buried layer.Schottky barrier ultraviolet (UV) detectors have been an attractive photovoltaic structure, providing high response, low noise, fast response time and easy fabrication. Ideal photovoltaic devices are not expected to exhibit gain. One of the issues yet unexplained in GaN based Schottky UV detectors, has been the presence of gain [1,2]. Presently, the III-nitride films are grown hetero-epitaxially on mismatched substrates [3]. This results in a rich microstructure dominated by dislocations that traverse vertically from the layer-substrate interface, all the way up to the film surface [4]. Typical dislocation density in GaN epitaxial layers is 10 8 -10 11 cm --2 [5]. We have recently demonstrated that the preferential orientation of the dislocations manifests itself in an intrinsic anisotropy in transport properties of the film [6]. Although lateral and vertical geometry GaN-based Schottky detectors have been already fabricated [1,2], no comparison has been made between the two detector configurations.In this work we explain the gain mechanism in GaN based Schottky detectors, and its bias dependence, for both detector structure types. We show that the vertical detector exhibits higher responsivity, lower 1/f noise, resulting in better detection properties.The layers used were grown by low-pressure metal organic chemical vapor deposition (MOCVD). For details see Ref.[7]. The vertical Schottky barrier detector (Fig. 1b) was fabricated by defining %300 mm diameter circular mesas. On the n + -GaN layer around the mesas, ohmic contacts were evaporated, using Ti : Al : Ni : Au (15, 220, 40, and phys. stat

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Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN

Cited by 21 publications

References 13 publications

Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate

Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism

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