Schottky barrier photodetectors based on AlGaN

Osinsky, A.; Gangopadhyay, S.; Lim, Beomdu; Anwar, M. Zubair; Khan, M. Asif; Kuksenkov, D.V.; Temkin, H.

doi:10.1063/1.120862

Applied Physics Letters

1998

DOI: 10.1063/1.120862

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Schottky barrier photodetectors based on AlGaN

A. Osinsky

S. Gangopadhyay

Beomdu Lim

et al.

Abstract: We report solar-blind AlxGa1−xN photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be 1/f limited, with a noise equivalent power of 6.6×10−9 W over the total response bandwidth of 100 kHz.

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Cited by 142 publications

(73 citation statements)

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“…In addition, AlGaN-based solar-blind detectors can operate under harsh conditions due to their wide bandgap and robust material properties [2]. Several research groups have demonstrated high-performance solar-blind photodetectors using Al Ga N material system [3]- [12].…”

mentioning

confidence: 99%

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

Bıyıklı

Kimukin

Aytür

et al. 2004

IEEE Photon. Technol. Lett.

120

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Abstract-We report solar-blind Al Ga 1 N-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values up to 6 V. The device responsivity increased with reverse bias and reached 0.11 A/W at 261 nm under 10-V reverse bias. The detectors exhibited a cutoff around 283 nm, and a visible rejection of four orders of magnitude at zero bias. Low dark current values led to a high differential resistance of 9.52 10 15 . The thermally limited detectivity of the devices was calculated as 4.9 10 14 cm Hz 1 2 W 1 .Index Terms-AlGaN, dark current, detectivity, heterostructure, high-performance, p-i-n photodiode. SOLAR-BLIND detectors with long-wavelength cutoff around 280 nm have important applications including missile plume sensing, flame detection, chemical-biological agent sensing, and covert space-to-space communications [1]. With the advent in material growth of high-quality Al Ga N ternary alloys, AlGaN-based solar-blind photodetectors emerged as a potential alternative for the photomultiplier tube (PMT) and silicon-based solar-blind detector technology. They have the advantage of intrinsic solar-blindness, and therefore, do not need complex and costly filters. In addition, AlGaN-based solar-blind detectors can operate under harsh conditions due to their wide bandgap and robust material properties [2]. Several research groups have demonstrated high-performance solar-blind photodetectors using Al Ga N material systemDetectivity is an important detector performance parameter which gives the signal-to-noise performance of the device. For low noise detection, detectivity should be as high as possible. The typical detectivity of a cooled PMT is about cm Hz W around 300 nm [13]. A comparable detectivity performance ( cm Hz W at 275 nm) was reported recently with a solar-blind AlGaN-based back-illuminated p-i-n photodiode [14]. In this letter, we report the design, fabrication, and characterization of solar-blind AlGaN p-i-n photodiodes with record dark current and detectivity performance. The measured dark current was below 3 fA at 6-V re- verse bias and a PMT-exceeding solar-blind detectivity of cm Hz W at 267 nm was achieved. The p-i-n photodiode wafer was grown by metal-organic chemical vapor deposition on sapphire substrate. The detector structure was designed for front (p-side) illumination. The active absorption region of the photodiode was formed with a 100-nm-thick unintentionally doped Al Ga N layer which was sandwiched between a 250-nm-thick n+ GaN layer and a 10-nm-thick p-type-doped Al Ga N layer. To improve the p-ohmic contact quality, a 30-nm-thick p-type GaN cap layer was grown on top of p-Al Ga N layer. A five-step microwave compatible semiconductor fabrication process was utilized to complete the device fabrication [15]. In the first two steps, ohmic contacts were formed. A 250-nm deep dry-etch for n+ ohmic contact was done via CCl F -based reactive ion etching (RIE). This was follow...

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mentioning

confidence: 99%

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

Bıyıklı

Kimukin

Aytür

et al. 2004

IEEE Photon. Technol. Lett.

120

View full text Add to dashboard Cite

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“…6 Fig . 5 illustrates the plot of the responsivity versus dark current for the state-of-the-art solar blind (230-290 nm) UV detectors reported [4][5][6]8,[10][11]16,[30][31][32][33][34][35][36][37] for the devices based on Al x Ga 1-x N as well as on β-Ga 2 O 3 . The detectors reported in this work have excellent responsivity while maintaining a very low dark current for 230-240 nm range.…”

mentioning

confidence: 99%

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Pratiyush

Krishnamoorthy

Solanke

et al. 2017

Applied Physics Letters

202

122

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“…In recent years, various types of AlGaN-based photodetectors have been reported, such as Schottky, pin, and MSM [1][2][3]. Previously, the authors reported on the RuO 2 Schottky contact properties [4] and a RuO 2 /GaN photodetector [5], which exhibited a responsivity and UV/visible rejection ratio of 0.23 A/W at 330 nm and 3 Â 10…”

mentioning

confidence: 99%

Optical Behavior of Pt/AlGaN Schottky‐Type UV Photodetector

Jung

Kim

Lee

et al. 2002

phys. stat. sol. (c)

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A Schottky-type solar-blind photodetector was designed and fabricated by employing an unintentionally doped Al 0.33 Ga 0.67 N layer, grown on a sapphire substrate using metalorganic chemical vapor deposition. A low-temperature grown AlGaN interlayer was also inserted between the GaN and AlGaN active layer and was shown to play an important role in decreasing the thermal and lattice mismatch-induced crack effect in the active AlGaN layer. The Schottky-type photodetectors fabricated on the crack-free AlGaN layer exhibited excellent electrical characteristics and UV detecting properties. The Pt/AlGaN Schottky photodiode had a dark current of 509 nA/cm 2 at --5 V, cut-off wavelength of 310 nm, and peak responsivity of 0.15 A/W at 280 nm. Also, the UV/visible extinction ratio was 1.5 Â 10 4 in the band edge, which is one of the highest values for AlGaN photodetectors.Introduction Due to its direct, wide bandgap and superior material characteristics, the AlGaN ternary compound is regarded as one of the most promising materials for use in UV/visible optoelectronic devices as well as in high-temperature and high-frequency electronic devices. Moreover, the cut-off wavelength of photodetection is tunable in the UV region from 200 nm to $365 nm, which is very important for a solar-blind detector, based on controlling the Al mole fraction in the photosensitive epi-layer. As such, an AlGaN-based device can be applied to a UV sensor.Despite these superior characteristics, there are significant lattice and thermal mismatches between an AlGaN epi-layer and sapphire substrate, thereby preventing the creation of high-quality undoped AlGaN without any cracks. In recent years, various types of AlGaN-based photodetectors have been reported, such as Schottky, pin, and MSM [1][2][3]. Previously, the authors reported on the RuO 2 Schottky contact properties [4] and a RuO 2 /GaN photodetector [5], which exhibited a responsivity and UV/visible rejection ratio of 0.23 A/W at 330 nm and 3 Â 10

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Schottky barrier photodetectors based on AlGaN

Cited by 142 publications

References 7 publications

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Optical Behavior of Pt/AlGaN Schottky‐Type UV Photodetector

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