Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

Jain, Vibhor; Cheng, Peng; Groß, Bernhard; Camillo-Castillo, Renata; Pekarik, John J.; Adkisson, J.; Liu, Qizhi; Gray, P.; Kaushal, Vikas; Harame, D.L.; DiVergilio, Adam W.

doi:10.1109/bctm.2013.6798147

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E Pin and Schottky Diodes1

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Cited by 5 publications

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“…6 (a) shows insertion loss at 1V forward bias and isolation at 4V reverse bias, as a function of frequency, for a typical anode dimension. The SiGe BiCMOS 9HP Schottky barrier diode was described by Jain at the 2013 BCTM [9]. A cutoff frequency can be defined as the product of the on-state resistance and off-state capacitance.…”

Section: E Pin and Schottky Diodesmentioning

confidence: 99%

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Pekarik

Adkisson

Gray

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T and 2.5V BV CEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

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Section: E Pin and Schottky Diodesmentioning

confidence: 99%