Schottky-barrier behavior of metals on<i>n</i>- and<i>p</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi></mml:math>

Aboelfotoh, M. O.; Fröjdh, Christer; Petersson, C. S.

doi:10.1103/physrevb.67.075312

Cited by 44 publications

(22 citation statements)

References 27 publications

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“…Aboelfotoh et al 33 suggested that Schottky barrier heights on covalent semiconductors such as SiC depended weakly on the metal work functions; thus, the partial Fermi level pinning would be caused by the interface states. They also pointed out that the chemical bonding at the interface played an important role in determining the barrier height.…”

Section: Correlation Between Electrical Properties and Microstructurementioning

confidence: 99%

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Tsukimoto

Nitta

Sakai

et al. 2004

Journal of Elec Materi

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In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2 ϫ 10 Ϫ5 Ω-cm 2 and 7 ϫ 10 Ϫ5 Ω-cm 2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and highresolution transmission electron microscopy (HRTEM). Ternary Ti 3 SiC 2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti 3 SiC 2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti 3 SiC 2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

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Section: Correlation Between Electrical Properties and Microstructurementioning

confidence: 99%

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Tsukimoto

Nitta

Sakai

et al. 2004

Journal of Elec Materi

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“…[107][108][109][110][111][112] The SBH of two polytypes of the SiC family, 3C-SiC and 6H-SiC, have been studied in detail. Experimentally, the dependence on the starting surface termination for the individual metal has been strong, although a systematic correlation has been lacking.…”

Section: Epitaxial Ms Interfaces and Theoretical Calculationsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,029

479

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The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

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“…However, the current transport properties of SiC remain still as a topic which is interested. In the literature, it is seen frequently that the researches connected with SiC Schottky rectifiers have majored on 4H-SiC [11][12][13][14][15][16][17][18][19][20][21][22][23][24] and 6H-SiC [15,[25][26][27][28]. However, 4H-SiC is preferred due to the isotropic nature of its electrical properties, and the fact that, the electron mobility of 4H-SiC is twice that of 6H-SiC [4,29].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

Gülnahar

2014

Superlattices and Microstructures

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Schottky-barrier behavior of metals onn- andp-type6H−SiC

Cited by 44 publications

References 27 publications

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

The physics and chemistry of the Schottky barrier height

Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode

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