Schottky barrier and pn-junctionI/V plots ? Small signal evaluation

Werner, J. H.

doi:10.1007/bf00615935

Cited by 428 publications

(196 citation statements)

References 16 publications

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“…The back ohmic contact was made depositing Au: Ge and an overlayer of Au and annealing at 450°C for approximately 2 min in an ultra-high pure (UHP) N 2 flow. It is well known that layer-by-layer growth of native oxide, which is inevitably present on the chemically prepared semiconductor surface, occurs when it is exposed to clean room air [8,19,[27][28][29][30][31]. The Schottky contacts were formed by evaporating Au dots of approximate diameter of 400 mm onto mirror smooth surfaces of Si-doped GaAs epitaxial layers grown on Ge and GaAs substrates.…”

Section: Methodsmentioning

confidence: 99%

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

Hudait

Krupanidhi

2001

Materials Science and Engineering: B

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The current-voltage (I -V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I-V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3 ×10 − 10 A vs. 4.32 × 10 − 12 A) in the GaAs/Ge Schottky diodes compared with the GaAs/GaAs diodes. The energy distribution of interface states was determined from the forward bias I -V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The interface states density was found to be large in the Au/n-GaAs/n-Ge structure compared with the Au/n-GaAs/n + -GaAs structure. The possible explanation for the increase in the interface states density in the former structure was highlighted.

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Section: Methodsmentioning

confidence: 99%

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

Hudait

Krupanidhi

2001

Materials Science and Engineering: B

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“…Werner [11] examined three different methods for determining the parameters of Schottky diode from the current-voltage characteristics. One of them coincides with the Cheung method.…”

Section: Calculation Of Barrier Parameters From Current-voltage Charamentioning

confidence: 99%

“…A number of methods for their determination, including determination from the current-voltage characteristic, is well known [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Attempts to generalize and systematize the existing methods were made in a number of papers [1][2][3][4], but estimation of accuracy, carried out in the most of works, does not take into account the peculiarities of contacts to wide-gap semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Ya¹,

Lashkaryov²

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au-TiB 2 -n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real currentvoltage characteristics and its model -the temperature dependence of the barrier height, the ideality factor dependence on the voltage -introduces the basic error into the calculated parameters in the diode under study.

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“…Hence, a linear fit of G/I versus the conductance G yields both n and R S if the appropriate range is considered [73]. Once R S is determined, the applied voltage V can be corrected for the voltage drop over R S and V e f f is obtained.…”

Section: Current Versus Voltage Characterizationmentioning

confidence: 99%

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Schifano¹,

Monakhov²,

Großner³

et al. 2007

Applied Physics Letters

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The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (0001¯) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of −2 and +2V. Concurrently, the surface roughness increases from 1.0±0.5 up to 2.0±0.5nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200°C for 30min. However, the contacts both before and after the annealing exhibited ideality factors of at least ∼1.8 at +0.5V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at ∼0.32eV below the conduction band edge.

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Schottky barrier and pn-junctionI/V plots ? Small signal evaluation

Cited by 428 publications

References 16 publications

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

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