Schottky and ohmic contacts to SiC

Zetterling, Carl-Mikael; Lee, S.-K.; Östling, Mikael

doi:10.1049/pbep002e_ch6

Cited by 4 publications

(4 citation statements)

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“…Using eq. (4.8), we obtained n = 1.18 and φ B = 1.32eV, which is comparable with most published data where n is from about 1.05 to 1.21 and φ B is correspondingly from 1.59 to 1.30 eV [96].…”

supporting

confidence: 92%

“…Therefore, the total resistance (R T ) between the neighboring contacts can be written as In this work, the specific contact resistance on n + epilayer was deduced to be about 2.8×10 −5 Ω⋅cm 2 , which is comparable with most published data from about 10 -4 to 10 -6 Ω•cm 2 . [96] ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library between neighboring contacts in TLM.…”

Section: Formation Of Source and Drain Contactsmentioning

confidence: 99%

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Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors

Zhu¹

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supporting

confidence: 92%

Section: Formation Of Source and Drain Contactsmentioning

confidence: 99%

Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors

Zhu¹

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“…The transfer length method (TLM) test structure, as shown in Fig. 1, was used to evaluate the metal contacts [6,7]. TLM structures consisted of five rectangular contact pads, with three subsets.…”

Section: Methodsmentioning

confidence: 99%

Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide

Evans

Okojie

Lukco³

2012

MSF

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Abstract. We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 °C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10 -4 Ω-cm 2 . The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 °C while potentially extending operations to 1000 °C.

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“…To explore this, our earlier work [5] is targeted at analyzing the gamma irradiation effects on 4H-SiC SBDs at a high dose level of 100 Mrad. It is well known that thermal annealing can partially recover the radiation induced damage in the detectors [6,7] ; moreover, this study is important to extend the detector operational lifetime. Therefore, the current work focusses on investigating the annealing impacts on the gamma irradiated 4H-SiC SBDs.…”

Section: Introductionmentioning

confidence: 99%

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Raja

Murty

2019

J. Semicond.

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Thermal annealing effects on gamma irradiated Ni/4H-SiC Schottky barrier diode (SBD) characteristics are analyzed over a wide range of temperatures (400–1100 °C). The annealing induced variations in the concentration of deep level traps in the SBDs are identified by thermally stimulated capacitance (TSCAP). A little decrease in the trap density at EC – 0.63 eV and EC – 1.13 eV is observed up to the annealing temperature of 600 °C. Whereas, a gamma induced trap at EC – 0.89 eV disappeared after annealing at 500 °C, revealing that its concentration (< 1013 cm−3) is reduced below the detection limit of the TSCAP technique. The electrical characteristics of irradiated SBDs are considerably changed at each annealing temperature. To understand the anomalous variations in the post-annealing characteristics, the interface state density distribution in the annealed SBDs is extracted. The electrical properties are improved at 400 °C due to the reduction in the interface trap density. However, from 500 °C, the electrical parameters are found to degrade with the annealing temperature because of the increase in the interface trap density. From the results, it is noted that the rectifying nature of the SBDs vanishes at or above 800 °C.

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Schottky and ohmic contacts to SiC

Cited by 4 publications

References 0 publications

Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors

Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors

Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

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