Scattering of Current Carriers and Transport Phenomena in Lead Chalcogenides

Ravich, Yu. I.; Efimova, B. A.; Tamarchenko, V.I.

doi:10.1002/pssb.2220430102

Cited by 203 publications

(141 citation statements)

References 14 publications

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“…The matching between the L-pockets' Luttinger volumes and Hall numbers implies that PbTe, up to a carrier concentration of p H = (9.4 ± 0.6) × 10 19 cm −3 , is single band, that is, all the carriers contributing to conduction belong to the L band. This result implies that the band offset between the L and Σ valence band maxima is underestimated in our DFT calculations, as well as all previously published band-structure calculations 8,13,33,34,[42][43][44][45][46] , which predict the appearance of the Σ band at a hole concentration of the order of p ≈ 1 × 10 19 cm −3 . The evolution of the three high symmetry L-pocket cross-sectional areas, in frequency units (f min , f max and f [100] ), with Hall number is plotted in figure 13.…”

Section: A Fermi Surface Topologysupporting

confidence: 83%

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

et al. 2016

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We present a combined experimental and theoretical study of the evolution of the low-temperature Fermi surface of lead telluride, PbTe, when holes are introduced through sodium substitution on the lead site. Our Shubnikov-de-Haas measurements for samples with carrier concentrations up to 9.4 × 10 19 cm −3 (0.62 Na atomic %) show the qualitative features of the Fermi surface evolution (topology and effective mass) predicted by our density functional (DFT) calculations within the generalized gradient approximation (GGA): we obtain perfect ellipsoidal L-pockets at low and intermediate carrier concentrations, evolution away from ideal ellipsoidicity for the highest doping studied, and cyclotron effective masses increasing monotonically with doping level, implying deviations from perfect parabolicity throughout the whole band. Our measurements show, however, that standard DFT calculations underestimate the energy difference between the L-point and Σ-line valence band maxima, since our data are consistent with occupation of a single Fermi surface pocket over the entire doping range studied, whereas the calculations predict an occupation of the Σ-pockets at higher doping. Our results for low and intermediate compositions are consistent with a non-parabolic Kane-model dispersion, in which the L-pockets are ellipsoids of fixed anisotropy throughout the band, but the effective masses depend strongly on Fermi energy.

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Section: A Fermi Surface Topologysupporting

confidence: 83%

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

et al. 2016

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“…The momentum relaxation-time for the scattering of charge carriers from the deformation potential of acoustic phonons, s ADP (E), is calculated from the following equation: 25,27 …”

Section: Resultsmentioning

confidence: 99%

New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

Dehkordi

Bhattacharya

Darroudi

et al. 2015

Journal of Applied Physics

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Effect of Pr substitution on structural and dielectric properties of SrTiO3 J. Appl. Phys. 112, 044106 (2012) Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO 3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr 2 O 3 versus Pr 6 O 11 ) on the synthesis and electronic transport in Pr-doped SrTiO 3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO 3 ceramics and provide new insight on further improvement of the thermoelectric power factor. V C 2015 AIP Publishing LLC.

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“…It should be noted that the lattice thermal conductivity is obtained by subtracting the electronic contribution (k E ) from the total thermal conductivity, where k E is determined by LT/r with the Lorenz number (L) calculated from the above SKB model. 14,48,49 With the addition of PbTe into Ag 2 Te, the fine microstructure obtained (Fig. 2) is generally of interest for thermoelectrics because of expected phonon scattering at the interfaces.…”

Section: Resultsmentioning

confidence: 99%

Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

2011

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Ag 2 Te simultaneously shows high mobility and low thermal conductivity, however the relatively low band gap of $0.2 eV prevents it from achieving high thermoelectric figure of merit, zT, in the high temperature phase. In this study, the band gap of Ag 2 Te has been increased enabling a zT of unity by forming alloys and composites with PbTe, thereby demonstrating the importance of exploiting potentially good thermoelectrics among these small band gap semiconductors and similar materials.

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Scattering of Current Carriers and Transport Phenomena in Lead Chalcogenides

Cited by 203 publications

References 14 publications

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

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