Bismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3 (or more precisely its alloys with Sb2Te3 for p‐type and Bi2Se3 for n‐type material) has the highest thermoelectric figure of merit, zT, of any material around room temperature. Since thermoelectric technology will be greatly enhanced by improving Bi2Te3 or finding a superior material, this review aims to identify and quantify the key material properties that make Bi2Te3 such a good thermoelectric. The large zT can be traced to the high band degeneracy, low effective mass, high carrier mobility, and relatively low lattice thermal conductivity, which all contribute to its remarkably high thermoelectric quality factor. Using literature data augmented with newer results, these material parameters are quantified, giving clear insight into the tailoring of the electronic band structure of Bi2Te3 by alloying, or reducing thermal conductivity by nanostructuring. For example, this analysis clearly shows that the minority carrier excitation across the small bandgap significantly limits the thermoelectric performance of Bi2Te3, even at room temperature, showing that larger bandgap alloys are needed for higher temperature operation. Such effective material parameters can also be used for benchmarking future improvements in Bi2Te3 or new replacement materials.

The band structure of PbTe can be manipulated by alloying with MgTe to control the band degeneracy. This is used to stabilize the optimal carrier concentration, making it less temperature dependent, demonstrating a new strategy to improve overall thermoelectric efficiency over a broad temperature range.

PbTe alloys have been the most efficient materials for thermoelectric power generation since the 1950s. In addition to the observed lattice thermal conductivity reduction by alloy scattering, recent efforts targeting electronic‐transport enhancement through band structure engineering have demonstrated a design route to achieve extraordinary thermoelectric performance. Guided by these recent results, the current work discusses the influence of alloying CdTe in p‐type PbTe where the solubility is strongly temperature‐dependent. Beneficial changes to the band structure and effective scattering of phonons are concurrently inferred when the PbTe–CdTe precipitate composite is expected to become a solid solution at high temperature, enhancing the peak thermoelectric figure of merit to ~1.7. This work emphasizes the importance of solid solution alloys of PbTe for thermoelectric power‐generation applications and also provides an upper limit of about 1 micrometer to the average distance between interfaces above which phonon scattering by composite interfaces is ineffectual.

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Ag 2 Te simultaneously shows high mobility and low thermal conductivity, however the relatively low band gap of $0.2 eV prevents it from achieving high thermoelectric figure of merit, zT, in the high temperature phase. In this study, the band gap of Ag 2 Te has been increased enabling a zT of unity by forming alloys and composites with PbTe, thereby demonstrating the importance of exploiting potentially good thermoelectrics among these small band gap semiconductors and similar materials.

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The complexity of the valence band structure in p-type PbTe has been shown to enable a significant enhancement of the average thermoelectric figure of merit (zT) when heavily doped with Na. It has also been shown that when PbTe is nanostructured with large nanometer sized Ag 2 Te precipitates there is an enhancement of zT due to phonon scattering at the interfaces. The enhancement in zT resulting from these two mechanisms is of similar magnitude but, in principle, decoupled from one another. This work experimentally demonstrates a successful combination of the complexity in the valence band structure with the addition of nanostructuring to create a high performance thermoelectric material. These effects lead to a high zT over a wide temperature range with peak zT > 1.5 at T > 650 K in Na-doped PbTe/Ag 2 Te. This high average zT produces 30% higher efficiency (300-750 K) than pure Na-doped PbTe because of the nanostructures, while the complex valence band structure leads to twice the efficiency as the related n-type La-doped PbTe/Ag 2 Te without such band structure complexity. Thermoelectric (TE) applications have attracted increasing interest in the last decade as a means to combat the ever growing rate of energy consumption throughout the world. The two main applications for thermoelectric materials are power generation, which utilizes the Seebeck effect, and solid state cooling, which has its roots in the Peltier effect. In recent years, thermoelectric power generation has been a prime interest to the automotive industry 1 as a sustainable and emission free route to vehicular waste heat recovery. The effectiveness of this process is restricted by the overall efficiency of the thermoelectric materials.On a materials level, the efficiency of the thermal to electrical energy conversion is determined by the thermoelectric figure of, where S, s, k E and k L are the Seebeck coefficient, electrical conductivity, and the electronic and lattice components of the thermal conductivity. Since S, s and k E have an intimate relationship with the carrier density, 1,2 the grand challenge in designing thermoelectric materials is the decoupling of electronic and thermal properties. Many methods to achieve a large power factor (S 2 s) or to reduce the thermal conductivity were proven to be successful, but combination of these two effects is difficult. As a result, the current best commercially available thermoelectric materials have a peak zT near unity.A number of mechanisms have been proposed to explain high zT in p-type PbTe. The Tl-doping in PbTe:Tl produces resonant electronic states that enhances the Seebeck coefficient, but reduces hole mobility 3 and has zT $ 1.4 at 500 C. Na-doped PbTe:Na, 4 without resonant states, 5,6 has similarly high zT that Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA. E-mail: jsnyder@caltech.edu Broader contextThermoelectric generators, which directly convert heat into electricity are being considered for industrial or automotive waste heat recovery. However, th...

Inspired by the promising thermoelectric properties of chalcopyrite-like quaternary chalcogenides, here we describe the synthesis and characterization of the solid solution Cu 2 Zn 1−x Fe x GeSe 4 . Upon substitution of Zn with the isoelectronic Fe, no charge carriers are introduced in these intrinsic semiconductors. However, a change in lattice parameters, expressed in an elongation of the c/a lattice parameter ratio with minimal change in unit cell volume, reveals the existence of a three-stage cation restructuring process of Cu, Zn, and Fe. The resulting local anisotropic structural disorder leads to phonon scattering not normally observed, resulting in an effective approach to reduce the lattice thermal conductivity in this class of materials.