Scattering by atomic spins and magnetoresistance in dilute magnetic semiconductors

Foygel, M.; Petukhov, A. G.

doi:10.1103/physrevb.76.205202

Cited by 16 publications

(16 citation statements)

References 30 publications

(59 reference statements)

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“…Such shifts should lead to the different hole concentrations in the corresponding bands. However, it is quite difficult to interpret the ratio of μ 1 / μ 2 as high as ∼40 to 90, observed in our work already in zero magnetic field, by different scattering of the carriers with opposite spin polarization . Indeed, only the values of μ 1 / μ 2 ∼ 4–5 have been predicted due to this reason at B as high as 10 T .…”

Section: Resultscontrasting

confidence: 67%

InSb:Mn – A high temperature ferromagnetic semiconductor

Lähderanta

Lashkul

Kochura

et al. 2014

Physica Status Solidi (a)

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Diluted magnetic semiconductor InSb:Mn exhibits a ferromagnetic behavior up to T ∼ 600 K due to presence of nanosize MnSb precipitates [Kochura et al., J. Appl. Phys. 113, 083905 (2013)]. Transport properties of InSb:Mn, including the resistivity, the magnetoresistance (MR), and the Hall effect, are investigated between T ∼ 1.6 and 300 K in magnetic fields B up to 15 T. The resistivity, ρ(T), displays an upturn with lowering the temperature below T ∼ 10–20 K attributable to the Kondo effect, where the universal Kondo behavior is observed. The Hall resistivity, ρH, demonstrates a nonlinear dependence on B up to T ∼ 300 K, suggesting an anomalous contribution due to the effect of the MnSb nanoprecipitates. The relative MR, Δρ(B)/ρ(0), is positive (pMR) above T ∼ 10 K and transforms into a negative one (nMR) with lowering temperature. The Hall effect and pMR are interpreted simultaneously with the two‐band model, addressed to presence of the two types of holes with quite different concentrations and mobilities. The dependences of nMR on B and T follow those of the Khosla–Fischer model, taking into account damping of the spin‐dependent scattering of charge carriers in magnetic field.

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Section: Resultscontrasting

confidence: 67%

InSb:Mn – A high temperature ferromagnetic semiconductor

Lähderanta

Lashkul

Kochura

et al. 2014

Physica Status Solidi (a)

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“…The difference in the conductance for the two spin channels is presumably a result of the spin polarity dependant mobility of DMS materials. 19 It is also noted that at low fields, the junction conductance model deviates from the experimental results for junction currents of 10 and 15 mA. This deviation is due to the current dependence of the junction resistance at zero magnetic field.…”

Section: Resultsmentioning

confidence: 83%

“…This assumption is consistent with recent theoretical studies on magnetoresistance of dilute magnetic semiconductors at high magnetic fields. 19 In that study it was shown that a positive magnetoresistance results from scattering due to spatial disorder of magnetic ions and locally enhanced spin splitting of the band. The mobility of carriers depends on their polarization.…”

Section: ͑3͒mentioning

confidence: 99%

Giant magnetoresistance of magnetic semiconductor heterojunctions

Rangaraju

Wessels

2009

Phys. Rev. B

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The giant magnetoresistance characteristics of magnetic III-V semiconductor p-n heterojunctions are described. The origin of the extremely large positive magnetoresistance ͑2680%͒ observed at room temperature and at a field of 18 T is attributed to efficient spin-polarized carrier transport. The magnetocurrent ratio of the junction saturates with magnetic field. The field dependence of the magnetoresistance points to the existence of a paramagnetic component, which determines the degree of spin polarization of the junction current. This work indicates that highly spin-polarized magnetic semiconductor heterojunction devices that operate at room temperature can be realized.

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“…42 Thermodynamic spin fluctuations part, MR INT can be reduced by application of external applied fields, however spin scattering off term of spatial fluctuations (due to atomic spin concentrations) may increase simultaneously. 43 Observation of finite NMR values in PSMO 850 presumably suggests an enhanced spin-polarized tunneling (SPT). The SPT part across the grains (with a high degree of spin polarization) having a net magnetic moment gives rise to a drop in resistance on the application of fairly low magnetic field.…”

Section: Magnetoresistance Propertiesmentioning

confidence: 99%

Emergence of ferromagnetism and metallicity in Pr0.5Sr0.5MnO3 nanoparticles

et al. 2018

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ARTICLES YOU MAY BE INTERESTED INSurface spin glass and exchange bias effect in Sm 0.5 Ca 0.5 MnO 3 manganites nano particles AIP Advances 1, 032110 (2011); https://doi.org/10.1063/1.3623428The effect of inserted layers on the anomalous Hall effect and perpendicular magnetic anisotropy in Ta In this paper, we have studied low-temperature magnetic properties and transport dynamics of half-doped Pr 0.5 Sr 0.5 MnO 3 (PSMO) nano-manganite. Nanoparticles with different average grain sizes are synthesized using chemical pyrophoric reaction route and exhibit same crystal structure. It is reported that particle size reduction in half-doped PSMO manganite interestingly leads to ferromagnetic (FM) metallic behavior which is accompanied by coupled positive magnetoresistance (PMR) (up to 9%) at fields (H ≤ 1kOe at 50K) and negative magnetoresistance (NMR) (∼59% at 100K) at 80kOe fields. Interestingly, maximum PMR is appeared at much lower than the critical field (30kOe) for the melting of insulating -antiferromagnetic (AFM) ordered state. Moreover, it is found that low-temperature AFM-FM phase transition, T N ∼ 135K is smeared out with reduction of particle size; however, the transition is prominent in bulk material. A metastable magnetic state with a mixed fraction of FM and AFM phases is observed below T N . Superparamagnetic (SPM) behavior of PSMO nanoparticles has been revealed by probing ac-susceptibility measurements. Lowtemperature transport dynamics has been investigated through four probe resistivity and magneto-transport measurements. A size-induced insulating-metallic phase transition is observed on nano dimension in the range of 125-155K under high magnetic fields; however, the bulk counterpart remains insulating over the entire temperature range. The non-trivial electronic-and magnetotransport properties are explained by the inter-grain spin-polarized hopping mechanism through double exchange (DE) interactions. These issues have been revisited and discussed in the framework of enhanced surface disorder, where surface spins plays the crucial role for inter-grain transport dynamics in nanometric dimension. We believe the present field dependent MR holds excellent potential for future spintronic devices and manifests the exotic properties of strongly correlated materials. © 2018 Author(s)

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Scattering by atomic spins and magnetoresistance in dilute magnetic semiconductors

Cited by 16 publications

References 30 publications

InSb:Mn – A high temperature ferromagnetic semiconductor

InSb:Mn – A high temperature ferromagnetic semiconductor

Giant magnetoresistance of magnetic semiconductor heterojunctions

Emergence of ferromagnetism and metallicity in Pr0.5Sr0.5MnO3 nanoparticles

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