Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfaces

Boland, John J.

doi:10.1080/00018739300101474

Cited by 294 publications

(175 citation statements)

References 116 publications

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“…Boland 22 even claimed that there was no such minimum and that its previous observation was a "tip artifact". Our results do not support this interpretation.…”

mentioning

confidence: 99%

“…Boland 22 argued that STM images of the monohydride structure could not show a splitting at bias voltages between -1 and -3 V, because the Si-H bonding states at 4.7 eV33 below EF are not accessible, and tunneling can therefore only occur through bulk valence band states. However, we believe that existing electronic structure calculations may not properly take into account all the rehybridizations which occur upon H adsorption.…”

mentioning

confidence: 99%

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Direct dimer-by-dimer identification of clean and monohydride dimers on the Si(001) surface by scanning tunneling microscopy

Wang¹,

Bronikowski²,

Hamers³

1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic resolution images of clean Si(001)-(2×1) and the monohydride phase, Si(001)-(2×1)H were investigated using scanning tunneling microscopy at various sample-tip bias voltages. At a sample-tip bias of −1.9 V, each dimer of the monohydride phase shows two protrusions 3.3 Å apart separated by a minimum 0.12 Å deep, while clean dimers show a single protrusion per unit cell. Monohydride dimers appear lower than ‘‘clean’’ dimers, with apparent height differences ranging from 1.9 Å at −1.6 V to 0.65 Å at −3.0 V sample bias. An analysis of the apparent height and spatial distribution of tunneling current within each dimer can be used to unambiguously discriminate between clean dimers, monohydride dimers, and vacancy defects. This methodology is applied to study the distribution of hydrogen on Si(001) surfaces during chemical vapor deposition using disilane, revealing segregation of the monohydride into nearly isotropic islands.

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“…Boland 22 even claimed that there was no such minimum and that its previous observation was a "tip artifact". Our results do not support this interpretation.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

Direct dimer-by-dimer identification of clean and monohydride dimers on the Si(001) surface by scanning tunneling microscopy

Wang¹,

Bronikowski²,

Hamers³

1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…16,28 However, the bright ball-like features most probably correspond to missing H atoms. 29,30 Fig. 1 also shows the RA spectrum after annealing the initially monohydride terminated surface under N 2 at 573 K and cooling to RT (thick black line).…”

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confidence: 99%

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Barrigón

Brückner

Supplie

et al. 2013

Applied Physics Letters

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Reactive scattering of H2 from Cu(100): Comparison of dynamics calculations based on the specific reaction parameter approach to density functional theory with experiment J. Chem. Phys. 138, 044708 (2013) Effect of transition-metal additives on hydrogen desorption kinetics of MgH2 Appl. Phys. Lett. 102, 033902 (2013) Writing charge into the n-type LaAlO3/SrTiO3 interface: A theoretical study of the H2O kinetics on the top AlO2 surface Appl. Phys. Lett. 101, 251605 (2012) Collective degrees of freedom involved in absorption and desorption of surfactant molecules in spherical nonionic micelles J. Chem. Phys. 137, 164902 (2012) Controlling the doping of single-walled carbon nanotube networks by proton irradiation

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“…The interaction of hydrogen with silicon surfaces is a subject of intensive research [1][2][3]. In particular, the question of the mechanism for the recombinative desorption of H 2 has been widely debated [3].…”

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confidence: 99%

H2 adsorption/desorption at Si(111)-(7 × 7): a density functional study

Vittadini

Selloni

1997

Surface Science

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The interaction of H 2 with the Si( 111 )-(7 x 7) surface is investigated by means of density functional slab calculations on a (4 x 2) reconstructed model surface. A viable mechanism for fll desorption is identified, which involves thermally activated Sill 2 units at adatom sites. This mechanism leads to adsorption and desorption barriers of 1.0 and 2.4 eV, respectively, in agreement with experiment. An explanation for the two components observed in the ~ peak of temperature-programmed desorption spectra is proposed. The lattice deformation energy at the transition state for desorption is large (~ 0.6 eV ). If we assume that this remains in the surface after H 2 desorption, the low translational energy of desorbing molecules which has been observed experimentally can in part be explained. © 1997 Elsevier Science B.V.

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Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfaces

Cited by 294 publications

References 116 publications

Direct dimer-by-dimer identification of clean and monohydride dimers on the Si(001) surface by scanning tunneling microscopy

Direct dimer-by-dimer identification of clean and monohydride dimers on the Si(001) surface by scanning tunneling microscopy

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

H2 adsorption/desorption at Si(111)-(7 × 7): a density functional study

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