High pressure has
been demonstrated to be a powerful approach of
producing novel condensed-matter states, particularly in tuning the
superconducting transition temperature (T
c) of the superconductivity in a clean fashion without involving the
complexity of chemical doping. However, the challenge of high-pressure
experiment hinders further in-depth research for underlying mechanisms.
Here, we have successfully synthesized continuous layer-controllable
SnSe2 films on SrTiO3 substrate using molecular
beam epitaxy. By means of scanning tunneling microscopy/spectroscopy
(STM/S) and Raman spectroscopy, we found that the strong compressive
strain is intrinsically built in few-layers films, with a largest
equivalent pressure up to 23 GPa in the monolayer. Upon this, unusual
2 × 2 charge ordering is induced at the occupied states in the
monolayer, accompanied by prominent decrease in the density of states
(DOS) near the Fermi energy (E
F), resembling
the gap states of CDW reported in transition metal dichalcogenide
(TMD) materials. Subsequently, the coexistence of charge ordering
and the interfacial superconductivity is observed in bilayer films
as a result of releasing the compressive strain. In conjunction with
spatially resolved spectroscopic study and first-principles calculation,
we find that the enhanced interfacial superconductivity with an estimated T
c of 8.3 K is observed only in the 1 ×
1 region. Such superconductivity can be ascribed to a combined effect
of interfacial charge transfer and compressive strain, which leads
to a considerable downshift of the conduction band minimum and an
increase in the DOS at E
F. Our results
provide an attractive platform for further in-depth investigation
of compression-induced charge ordering (monolayer) and the interplay
between charge ordering and superconductivity (bilayer). Meanwhile,
it has opened up a pathway to prepare strongly compressed two-dimensional
materials by growing onto a SrTiO3 substrate, which is
promising to induce superconductivity with a higher T
c.