Scanning helium ion microscope: Distribution of secondary electrons and ion channeling

Petrov, Yu. V.; Vyvenko, O. F.; Bondarenko, A. S.

doi:10.1134/s1027451010050186

Cited by 33 publications

(17 citation statements)

References 14 publications

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“…28 The number and energy distribution of these ion induced secondary electrons differs from what is found in a SEM. A sharper maximum at lower energies is usually found 38,39 in HIM. In Fig.…”

Section: Secondary Electronsmentioning

confidence: 95%

“…This allows for two additional contrast mechanisms in HIM. The well known channeling contrast 31,39 can be exploited to obtain the crystal orientation of samples with a large lateral resolution. 46 This technique makes use of calculations of the blocked area fraction, which yields results similar to stereographic projections of channeling minima or Laue back reflection patterns.…”

Section: Backscattered Heliummentioning

confidence: 99%

See 1 more Smart Citation

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

207

155

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Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.

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Section: Secondary Electronsmentioning

confidence: 95%

Section: Backscattered Heliummentioning

confidence: 99%

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

207

155

View full text Add to dashboard Cite

show abstract

“…A beam spot size of the HIM is 0.25 nm, and a maximum distribution of secondary electrons energy was about 1 eV [4], so it is expected that the helium ion beam deposition brings about tungsten particles of less than a few nm diameter without any deposition at the periphery of a focused area due to secondary electrons of higher energy than a few eV which is generated in the gallium ion case. Figure 1a shows a SEM image of a tungsten nanoparticle and cross lines deposited on a Si substrate and an enlarged STEM image of the nanoparticle in fig.…”

Section: -8569 Japanmentioning

confidence: 99%

Nanometer Size Tungsten Markers Formation by a Helium Ion Microscope Equipped with Gas Injection System for Alignment of TEM Tomographic Tilt Series

et al. 2011

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“…However, many differences exist between these two imaging techniques as a direct result of the different beam-sample interactions occurring. At the typical acceleration voltage of 30 kV the HIM produces secondary electrons (SE) with a very low energy distribution [2]. These electrons can only escape from the top few nanometres of a sample [3], resulting in very surface sensitive imaging [4].…”

Section: Introductionmentioning

confidence: 99%

Helium ion microscopy of graphene: beam damage, image quality and edge contrast

Fox¹,

Zhou²,

O’Neill³

et al. 2013

Nanotechnology

114

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A study to analyse beam damage, image quality and edge contrast in the helium ion microscope (HIM) has been undertaken. The sample investigated was graphene. Raman spectroscopy was used to quantify the disorder that can be introduced into the graphene as a function of helium ion dose. The effects of the dose on both freestanding and supported graphene were compared. These doses were then correlated directly to image quality by imaging graphene flakes at high magnification. It was found that a high magnification image with a good signal to noise ratio will introduce very significant sample damage. A safe imaging dose of the order of 10 13 He + cm −2 was established, with both graphene samples becoming highly defective at doses over 5 × 10 14 He + cm −2 . The edge contrast of a freestanding graphene flake imaged in the HIM was then compared with the contrast of the same flake observed in a scanning electron microscope and a transmission electron microscope. Very strong edge sensitivity was observed in the HIM. This enhanced edge sensitivity over the other techniques investigated makes the HIM a powerful nanoscale dimensional metrology tool, with the capability of both fabricating and imaging features with sub-nanometre resolution.

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Scanning helium ion microscope: Distribution of secondary electrons and ion channeling

Cited by 33 publications

References 14 publications

Helium ion microscopy

Helium ion microscopy

Nanometer Size Tungsten Markers Formation by a Helium Ion Microscope Equipped with Gas Injection System for Alignment of TEM Tomographic Tilt Series

Helium ion microscopy of graphene: beam damage, image quality and edge contrast

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