Scanning force microscopy of heavy-ion tracks

Ackermann, Jörg; Grafström, S.; Neitzert, Marcus; Neumann, R.; Trautmann, C.; Vetter, J.; Angert, N.

doi:10.1080/10420159308219711

Cited by 12 publications

(2 citation statements)

References 15 publications

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“…With a suitable etchant, tracks can be transformed into long cylindrical pores with diameters between several tens of nanometers up to a few micrometers. In the past, etched tracks have been studied by various techniques such as scanning and transmission electron microscopy [4][5][6], scanning force microscopy [7][8][9][10], electrical conductivity measurements [11][12][13], small-angle X-ray scattering [14][15][16], and galvanic replication [17][18][19][20][21][22][23]. The porosity of track-etch membranes can be adjusted by the pore density (irradiation fluence) and the pore size primarily tuned by the parameters of the etching process (e.g.…”

Section: Introductionmentioning

confidence: 99%

Investigation of initial stage of chemical etching of ion tracks in polycarbonate

Sertova

Balanzat

Toulemonde

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 99%

Investigation of initial stage of chemical etching of ion tracks in polycarbonate

Sertova

Balanzat

Toulemonde

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…Since the early 1990s, SFM has been used to image ion tracks in various materials (e.g. mica, polymers, high-T c superconductors, and others) [9][10][11][12]. Furthermore, SFM has been applied to different ionic crystals such as alkali halides (e.g.…”

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confidence: 99%

Heavy-ion induced modification of lithium fluoride observed by scanning force microscopy

Müller¹,

Neumann²,

Schwartz³

et al. 1998

Applied Physics A: Materials Science & Processing

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In order to study ion-induced damage in single crystals of lithium fluoride with scanning force microscopy (SFM), samples are irradiated with several heavy-ion species with kinetic energy of 11.4 MeV per nucleon. As concluded from a previous analysis of ion tracks in LiF by optical absorption spectroscopy and small-angle X-ray scattering, single point defects occur in a track halo with a radius in the range 15-30 nm, whereas defect aggregates are formed in a track core region possessing a radius of only 1-2 nm. These aggregates can be attacked by chemical etching if the energy loss along the ion trajectory surpasses a critical value of about 1 keV/Å. SFM images of etched as well as unetched sample surfaces reveal new damage characteristics: etched ion-track profiles directed parallel to the ion trajectories exhibit a sequence of single etch pits with an average distance between them of about 140 nm. After exposure to heavy-ion irradiation at normal incidence, the unetched LiF surface is covered with round hillocks with a mean diameter of 55 (8) nm and heights of the order of 3 nm.

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