Scanning force microscopy measurements of latent image topography in chemically amplified resists

Ocola, Leonidas E.; Fryer, David S.; Reynolds, Geoffrey W.; Krasnoperova, Azalia A.; Cerrina, F.

doi:10.1063/1.116602

Cited by 27 publications

(21 citation statements)

References 5 publications

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“…It has been attributed to the shrinkage of the polymer probably due to an edge effect but has not been clarified yet. 11,27 Different methods of exposure of the radiation have been used in each of these cases, such as UV exposure through a mask, 8 electron beam writing, 24 and exposure to the interference of two UV beams for the samples studied here. This fact suggests that this topographical structure appears to occur during the postexposure bake time.…”

Section: Resultsmentioning

confidence: 99%

Chemical Imaging of Photoresists with Coherent Anti-Stokes Raman Scattering (CARS) Microscopy

Potma¹,

Xie²,

Muntean³

et al. 2003

J. Phys. Chem. B

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Coherent anti-Stokes Raman scattering (CARS) microscopy is demonstrated to be a powerful imaging technique with chemical specificity for studying chemically amplified polymer photoresists. Samples of poly(tertbutyloxycarbonyloxystyrene) (PTBOCST) resist imprinted by interferometric lithography with a pattern of lines/spaces of 400 nm/400 nm and 200 nm/200 nm were used to test CARS imaging capabilities. Chemical contrast in the image is obtained by probing the carbonyl stretching vibration of the tert-butoxyl carbonyl group of PTBOCST. The experimental images demonstrate high spatial resolution (≈270 nm) and strong signal, which allows short acquisition times. Advantages and limitations of CARS in comparison with other imaging techniques with chemical specificity, such as infrared near field scanning optical microscopy (IR NSOM), are discussed.

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Section: Resultsmentioning

confidence: 99%

Chemical Imaging of Photoresists with Coherent Anti-Stokes Raman Scattering (CARS) Microscopy

Potma¹,

Xie²,

Muntean³

et al. 2003

J. Phys. Chem. B

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“…Recently there have been efforts to study exposed undeveloped photoresist with scanning probe microscopy. 10 In Fig. 3, an atomic force microscope ͑AFM͒ image of a 50ϫ50 m box patterned with 30 kV electrons on APEX-E is shown.…”

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confidence: 99%

“…10 The image formation process in photoresists is an area of continuous research. Little is understood about the correlation between chemical changes due to processing after exposure to radiation and the corresponding changes in the resist physical properties.…”

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confidence: 99%

Synchrotron radiation micro-Fourier transform infrared spectroscopy applied to photoresist imaging

Ocola

Cerrina

May

1997

Applied Physics Letters

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The application of a micro-Fourier transform infrared, (μ-FTIR), spectroscopic system, using synchrotron radiation as a light source, for photoresist chemical analysis has been investigated. The better signal to noise due to the high brightness of the infrared radiation from the synchrotron permits higher spatial resolution scans than with a conventional glowbar. This permits a new technique of μ-FTIR spectroscopy, which potentially can get close to diffraction limited resolution, with high chemical sensitivity, for mid-IR wavelengths ranging from 2.3 μm (4400 cm−1) to 9 μm (1100 cm−1). An example of application of imaging the local chemistry changes of a chemically amplified photoresist with post-exposure bake shows the exciting capability of this technique for nondestructive resist exposure process control.

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“…Ocola et al studied the latent image formation for e-beam lithography of SAL-605, a negative tone DUV CAR manufactured by Shipley. 24 They found that before the PEB the exposed regions are valleys ͑low regions͒ in the resist, while after the PEB the features are ridges ͑high regions͒. In other words, the cross linking induced by the PEB increases the resist volume.…”

Section: B Latent Imagesmentioning

confidence: 99%

Hybrid atomic force/scanning tunneling lithography

Wilder¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We present a new technique for performing lithography with scanning probes that has several advantages over standard methods. This hybrid lithography system combines the key features of the atomic force microscope ͑AFM͒ and the scanning tunneling microscope ͑STM͒ by incorporating two independent feedback loops, one to control current and one to control force. We demonstrate a minimum resolution of 41 nm and nanometer alignment capabilities. This lithography system is capable of writing continuous features over sample topography. Topography is often present in real patterning applications and poses problems for AFM and STM lithography. We report 100 nm resist features patterned over 180 nm of topography created by local oxidation of silicon. The hybrid AFM/STM system is designed as a robust scanning probe lithography tool, capable of high-speed patterning and suited for integrated circuit lithography applications.

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Scanning force microscopy measurements of latent image topography in chemically amplified resists

Abstract: Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography Latent image characterization of postexposure bake process in chemically amplified resists

Cited by 27 publications

References 5 publications

Chemical Imaging of Photoresists with Coherent Anti-Stokes Raman Scattering (CARS) Microscopy

Chemical Imaging of Photoresists with Coherent Anti-Stokes Raman Scattering (CARS) Microscopy

Synchrotron radiation micro-Fourier transform infrared spectroscopy applied to photoresist imaging

Hybrid atomic force/scanning tunneling lithography

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