2017
DOI: 10.1109/jmems.2016.2614660
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ScAlN MEMS Cantilevers for Vibrational Energy Harvesting Purposes

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Cited by 42 publications
(14 citation statements)
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“…The target to substrate distance was fixed at 65 mm in both cases. More details on the deposition of AlN and ScAlN can be found in [11,13]. A 150 nm molybdenum layer is deposited and patterned by wet chemical etching to create the top electrical contacts.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The target to substrate distance was fixed at 65 mm in both cases. More details on the deposition of AlN and ScAlN can be found in [11,13]. A 150 nm molybdenum layer is deposited and patterned by wet chemical etching to create the top electrical contacts.…”
Section: Methodsmentioning
confidence: 99%
“…The major drawbacks of AlN are the relatively low piezoelectric coefficients ( , = 3.9 pm/V ) and the relatively low intrinsic electromechanical coupling factor ( , • ⁄ = 6.5% with the stiffness tensor and the thin film permittivity tensor ) [8]. In recent years, there has been an ongoing effort to replace AlN by scandium doped AlN (ScAlN) in micro electromechanical systems (MEMS) as well as in SAWs and BAWs for enhanced performance [9][10][11]. In this work, we demonstrate superior properties of ScAlN-based solidly mounted resonators (SMR) compared to AlN-based devices.…”
Section: Introductionmentioning
confidence: 99%
“…Innovations in material processing technology and/or materials synthesis targeting increases in k 2 or reductions in tan δ increase attainable SNR. As an example, in bending 3-1 plate configurations, ScAlN has recently demonstrated the ability to achieve 2× the charge output of AlN with minimal increase in dielectric constant [16], suggesting 4× improvement in k 2 is possible over that of AlN.…”
Section: Maximum Achievable Snrmentioning
confidence: 99%
“…Doping Sc element into AlN is an effective way to enhance the value of piezoelectric strain coefficient, and studies found that ScAlN has a five times higher piezoelectric constant than pure AlN [ 11 , 12 ]. P.M. Mayrhofer et al [ 13 ] fabricated and evaluated the performance of ScAlN and pure AlN-based energy harvesters. Experimentation showed that the increase of e 31 of ScAlN film contributes to the improved output characteristics compared with AlN thin film.…”
Section: Introductionmentioning
confidence: 99%