ScAlN/AlN Film-Based Lamé Mode Resonator With High Effective Electromechanical Coupling Coefficient

Zhou, Jie; Liu, Yanping; Xu, Qinwen; Xie, Ying; Cai, Yao; Liu, Jieyu; Liu, Wenjuan; Tovstopyat, Alexander; Sun, Chengliang

doi:10.1109/jmems.2021.3102145

Cited by 18 publications

(8 citation statements)

References 15 publications

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“…1(c). On the basis of this design, the proposed AlScN-based FBAR is fabricated utilizing a complementary metal-oxide-semiconductor (CMOS)-compatible microfabrication process involving a combination of seven photolithography masks [17][18][19] . The detailed fabrication process is demonstrated in Fig.…”

Section: Design and Fabricationmentioning

confidence: 99%

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

et al. 2022

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Bulk acoustic wave (BAW) filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor (CMOS) compatible integration process. However, it is challenging for a traditional aluminum nitride (AlN)-based BAW filter to meet several allocated 5G bands with more than a 5% fractional bandwidth via an acoustic-only approach. In this work, we propose an Al0.8Sc0.2N-based film bulk acoustic wave resonator (FBAR) for the design of radio frequency (RF) filters. By taking advantage of a high-quality Al0.8Sc0.2N thin film, the fabricated resonators demonstrate a large Keff2 of 14.5% and an excellent figure of merit (FOM) up to 62. The temperature coefficient of frequency (TCF) of the proposed resonator is measured to be −19.2 ppm/°C, indicating excellent temperature stability. The fabricated filter has a center frequency of 4.24 GHz, a −3 dB bandwidth of 215 MHz, a small insertion loss (IL) of 1.881 dB, and a rejection >32 dB. This work paves the way for the realization of wideband acoustic filters operating in the 5G band.

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Section: Design and Fabricationmentioning

confidence: 99%

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

et al. 2022

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“…3) Introducing the Sc element into AlN material is a promising way to boost piezoelectric coefficients which enlarge the electromechanical coupling coefficients. [4][5][6][7] However, Sc doping also increases the internal loss of AlN piezoelectric film which can be considerably reduced by coupling AlN film with ScAlN film. [8][9][10] In this scenario, using ScAlN/AlN composite film can be a potential choice for fabricating high-performance FBARs.…”

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confidence: 99%

“…Liu et al and Zhou et al demonstrated the high performance of ScAlN/AlN composite film and revealed that the maximum power density of the ScAlN/AlN-based TWC cantilever harvester is about twice that of the AlN-based harvester. 4,10,11) However, using bilayer composite thin film as a piezoelectric material for FBAR design requires knowledge of the effective properties of the composite film. A few literatures provide the effective coefficients of such composite films using theoretical methods.…”

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“…Considering that A is connected to both elastic and piezoelectric matrices, only inverting the whole ∑-matrix enables the elastic and piezoelectric matrices to affect each other, and therefore each portion describes no longer the material elastic or piezoelectric quality itself. 4) Under the same stress assumption, we define the F-matrix as follows:…”

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confidence: 99%

“…Under uniform elastic displacements and potential boundary conditions, the elastic mean strain theorem for piezoelectricity was extended, and the effective electroelastic modulus matrix F eff of piezoelectric composites was discovered as follows 4,21)…”

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Micromechanics predictions of effective elastic, piezoelectric and dielectric properties of composite piezoelectric films

Cai¹,

Gu²,

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et al. 2022

Appl. Phys. Express

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Knowledge of the effective elastic, piezoelectric and dielectric properties facilitates the design of radio frequency devices, for example film bulk acoustic resonators (FBARs). Based on the Reuss model and Eshelby-Mori-Tanaka (EMT) micromechanics theory, this paper predicts the effective properties of bilayer composite piezoelectric film consisting of AlN film and vertical compound ScAlN film. The evaluated material coefficients and original material parameters are substituted into the FEM simulation to investigate the performance of FBARs, respectively. The consistent resonant frequencies of FBARs demonstrate the accuracy of Reuss model in calculating the effective parameters of bilayer composite piezoelectric film.

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A novel temperature-dependent percolation model for the electrical conductivity and piezoresistive sensitivity of carbon nanotube-filled nanocomposites

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ScAlN/AlN Film-Based Lamé Mode Resonator With High Effective Electromechanical Coupling Coefficient

Cited by 18 publications

References 15 publications

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

Micromechanics predictions of effective elastic, piezoelectric and dielectric properties of composite piezoelectric films

A novel temperature-dependent percolation model for the electrical conductivity and piezoresistive sensitivity of carbon nanotube-filled nanocomposites

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