Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

Williams, S.C.; Hulfachor, R.B.; Littlejohn, M. A.; Holton, W. C.

doi:10.1109/16.658839

Cited by 13 publications

(7 citation statements)

References 18 publications

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“…the expression of drain current for generalized gate geometry can be obtained by using (9), (10), (11) and (12). The variation can be considered by altering the doping concentration or dielectric constant of the insulator or thickness of the insulator (for gate insulator geometry) or workfunction of the metal in various regions.…”

Section: Cut-off Frequency Modelmentioning

confidence: 99%

Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device

Aggarwal¹,

Gupta²,

Gupta³

2007

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (Tgate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal workfunction and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

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Section: Cut-off Frequency Modelmentioning

confidence: 99%

Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device

Aggarwal¹,

Gupta²,

Gupta³

2007

JSTS:Journal of Semiconductor Technology and Science

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“…However, when the transistor size is below 100 nm physical phenomena like short channel effect and channel doping fluctuations become more dominant and the further scaling down of the device dimensions will not lead to a considerable improvement in the device performance. To overcome this limitation, channel engineering structures have been proposed and fabricated [1][2][3][4][5]. However, it has been mentioned [6] that channel engineering can improve the performance of a circuit manufactured by a certain technology only within 10%.…”

Section: Introductionmentioning

confidence: 99%

Modeling of noise behavior of graded bandgap channel MOSFET at GHz frequencies

Abou‐Elnour

2004

SPIE Proceedings

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A novel graded band gap channel Si-SiGe MOSFET structure has been suggested and its characteristics has been investigated. The investigations indicated that the suggested structure reduces the short-channel effects, increases the cutoff frequency, and hence makes it usage at high frequency and Low noise applications prefeable. To show the superior performance of the suggested structure at GHz frequencies, and as an example, the noise behavior of the structure is thoroughly investigated. First the device noise model parameters are calculated from D.C. and A.C. characteristics. The extracted noise model parameters are then used to determine the minimum noise figure and minimum noise temperature at GHz frequencies. The effects of the different device parameters on the noise performance are determined. Finally, the results are compared with those of conventional MOSFET structure to show the superior performance of graded band gap Si-SiGe MOSFETs at these frequency ranges.

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“…Owing to continuous scaling down of the MOSFET device dimensions several hundred millions of transistors were being integrated on a single chip. In these devices reliability problems have been extremely stringent (Taked, 1997;Williams et al, 1998;Thomas, 1998). The high field reliability endurance of short-channel MOS devices will be still a critical constrain.…”

Section: Introductionmentioning

confidence: 99%

Study of avalanche breakdown (MI) mode in sub micron MOSFET device

Singh

2005

Microelectronics International

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Purpose -To study the breakdown (MI) mechanism in the sub-micron MOSFET device. Design/methodology/approach -Second-order Poisson's differential equation is solved for suitable boundary condition to find the electric field expression for the sub-micron devices. With the help of the electric field expression the exact relation for multiplication factor is derived, and then the equation for breakdown voltage has been generated. Findings -This research paper provides the following findings: by controlling oxide thickness, junction depth and drain voltage, the breakdown can be easily controlled in the sub-micron device; multiplication factor is not only affected by maximum field but also due to critical field; for very low gate voltage, the offset voltage mainly governs the breakdown; the breakdown voltage increases continuously as the channel length increases. It means, for larger channel length the breakdown will occur at high drain voltage.Research limitations -This paper is based on the assumption that the electric field along the channel is independent of the junction depth (although not correct) and varying linearly from zero to E sat . Orginality/value -The paper derived the exact expression of the multiplication factor. Also discusses that for MI mode of breakdown, the breakdown voltage increases slowly with the gate voltage and approximated by drain saturation voltage plus offset voltage.

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Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

Cited by 13 publications

References 18 publications

Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device

Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device

Modeling of noise behavior of graded bandgap channel MOSFET at GHz frequencies

Study of avalanche breakdown (MI) mode in sub micron MOSFET device

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