Scaling Split-Gate Flash Memory Technology for Advanced MCU and Emerging Applications

Do, Nhan; Kim, J.; Lemke, Steven; Tee, L.; Tkachev, Yuri; Liu, X.; Ghazavi, P.; Zhou, Feichi; Villard, B.; Jourba, S.; Decobert, C.; Hong, Suck Won; Vu, Truong V.; Trinh, Stephanie; Ly, Aliou; Tran, Hoang; Tiwari, Vipin; Reiten, Mark

doi:10.1109/imw.2019.8739270

Cited by 4 publications

(2 citation statements)

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“…The SSI mechanism is investigated systematically by means of Synopsys Sentaurus technology computer-aided design (TCAD) simulations, varying the program conditions. All the numerical simulations have been performed fixing the values of the coupling gate voltage (V CG ), bit line voltage (V BL ) and erase gate voltage (V EG ) reported in literature [19][20][21][22][23] for the latest technology node, listed in Table 1 and shown in Figure 2. In particular, the bias conditions are: V CG = HV (>10 V) [19][20][21][22]; word line and commons source voltages (V WL and V CS , respectively) have been varied, respectively, in the range 0.7-1.1 V and 4-4.6 V [20,21,23]; V EG = V CS in order to avoid charge migration between the two electrodes [23]; I BL is fixed at~1 µA [20,24].…”

Section: Methodsmentioning

confidence: 99%

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Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Mazzetta

Irrera

2021

Electronics

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A theoretical study of the influence of word line and common source electrodes on the program operation in shrank SuperFlash memory is proposed. Numerical simulations demonstrate that the literature model defined for previous nodes is not always suitable, due to the continuous cell physical size reduction and to the consequent increment of capacitive coupling between the floating gate and adjacent electrodes. To get a deeper insight, an analytical model of the electric field in the region of source side injection is proposed. This model describes the impact of the cell physical and electrical parameters on the vertical and horizontal field components and highlights the strong dependence of the carrier injection on the technology node. Furthermore, the numerical and analytical models estimate the influence of the word line and common source electrodes on the time-to-program, the floating gate potential and the source side injection efficiency, taking into consideration, at the same time, their possible impact on the cell reliability.

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