Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

Chevalier, P.; Lacave, Thomas; Canderle, E.; Pottrain, A.; Carminati, Y.; Rosa, J.; Pourchon, F.; Derrier, N.; Avenier, G.; Montagne, A.; Balteanu, Andreea; Dacquay, E.; Sarkas, I.; Céli, D.; Gloria, D.; Gaquière, C.; Voinigescu, S.P.; Chantre, A.

doi:10.1109/csics.2012.6340083

Cited by 36 publications

(9 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, an average τ gate of 2.24 ps was measured in a B5T RO_IV using transistors with L E = 1.44 μm [14]. This result is also confirmed in [12]. Because of horizontal scaling of the effective emitter width (from 0.13 to 0.12 μm) we have an improvement of 13.5%, 17.3%, and 18.7% in τ gate for the drawn emitter lengths 1.5, 3, and 5 μm, respectively.…”

Section: Circuit Performancesupporting

confidence: 66%

See 1 more Smart Citation

Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology

Weiß¹,

Majek²,

Sahoo³

et al. 2013

IEEE Electron Device Lett.

View full text Add to dashboard Cite

In this letter, we report a record gate delay of 1.65 ps of a current-mode logic ring oscillator (RO) fabricated with an advanced SiGe:C heterojunction bipolar transistor technology. Outstanding performance has been achieved through process and layout optimization and inductive peaking in series with the load resistor. The RO operates at a single-ended voltage swing of 200 mV. The transistors used in the RO exhibit a peak transit frequency f T of 310 GHz and a peak maximum oscillation frequency f max of 400 GHz. To the best of our knowledge, a gate delay of 1.65 ps is the fastest result for a bipolar transistor-based technology.Index Terms-Heterojunction bipolar transistors (HBT), microwave circuits, ring oscillators (ROs), semiconductor device measurement, silicon germanium (SiGe).

show abstract

Section: Circuit Performancesupporting

confidence: 66%

“…The RO was fabricated using STMicroelectronics B5T technology [12]. This technology is the last evolutionary scaling step within DOTFIVE after B4T [13].…”

Section: Fabrication and Device Performancementioning

confidence: 99%

Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology

Weiß¹,

Majek²,

Sahoo³

et al. 2013

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…The HBTs issued from both technologies have a Double-Polysilicon self-aligned base-emitter structure provided by the selective epitaxial growth of the SiGe:C base. More information can be found in [4,5].…”

Section: A Device Structurementioning

confidence: 98%

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

Seif

Pascal

Sagnes

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

Self Cite

View full text Add to dashboard Cite

In this study, we present recent low frequency noise results obtained on Si/SiGeC Heterojunction Bipolar Transistors (HBTs) associated with a 0.13µm BiCMOS technology. Two technologies are studied, referenced as A and B, with high frequency figures of merit f T /f MAX (unity current gain frequency / maximum oscillation frequency) 220/280 GHz for technology A and 300/400 GHz for technology B. The LF Noise measurements are performed in the 1Hz-100 kHz frequency range as a function of the base bias current and of the emitter area A E . The 1/f noise component is studied through the SPICE LFN parameters A F and K F . The K B figure of merit (K B = K F * A E ), used to compare the 1/f noise level, has an excellent value of 1.5 10 -10 µm² for technology A and above 6 10 -10 µm² for technology B. Dispersion of the 1/f noise level observed on technology B is associated to the presence of predominant GR components.A temperature study of the 1/f noise level evolution in the range 15 -100 °C was also done. The temperature dependence is week except at very low base current bias.

show abstract

“…In [13], a self-feeding oscillator array generates 1.1 mW radiated power at 260 GHz. Besides these work in CMOS, radiation sources in BiCMOS processes also demonstrate great potential, thanks to the superior speed and breakdown voltage of the SiGe heterojunction bipolar transistor (HBT) [14]. For example, radiators using a 130 nm SiGe BiCMOS process ( GHz, V) achieve 1.3 mW of power at 245 GHz [15]and 74 W (single element)/1 mW (incoherent array) of power at 530 GHz [16].…”

Section: Introductionmentioning

confidence: 99%

A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

Han

Jiang

Mostajeran

et al. 2015

IEEE J. Solid-State Circuits

136

View full text Add to dashboard Cite

A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter structure called return-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the fundamental oscillation power, harmonic generation, as well as on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a fully-integrated phase-locked loop (PLL) is also implemented in the transmitter. Such on-chip phase-locking capability is the first demonstration for all THz radiators in silicon. In the far-field measurement, the total radiated power and EIRP of the chip is 3.3 mW and 22.5 dBm, respectively. The transmitter consumes 610 mW DC power, which leads to a DC-to-THz radiation efficiency of 0.54%. To the authors' best knowledge, this work presents the highest radiated power and DC-to-THz radiation efficiency in silicon-based THz radiating sources.

show abstract

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

Cited by 36 publications

References 9 publications

Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology

Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

Contact Info

Product

Resources

About