A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

Han, Ruonan; Jiang, Chen; Mostajeran, Ali; Emadi, Mohammad Javad; Aghasi, Hamidreza; Sherry, Hani; Cathelin, Andreia; Afshari, Ehsan

doi:10.1109/jssc.2015.2471847

Cited by 135 publications

(30 citation statements)

References 36 publications

(65 reference statements)

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“…A OPT and Φ OPT are the optimum voltage gain and phase shift for the two-port at f max . Equations (8) and (9) are derived assuming no clipping to the power rails occurs inside the circuit. If clipping happens, another set of equations apply for A OPT ; Φ OPT remains the same [8,9].…”

Section: Power Gain Maximization For a Given Active Devicementioning

confidence: 99%

“…Since the above derivation is restricted to f max , it would be interesting to observe the possible deviations of Eqs. (8) and (9) with respect to the two-port's voltage gain and phase shift under biconjugate matching when operating at frequency below f max . A SiGe HBT transistor is used as an example.…”

Section: Power Gain Maximization For a Given Active Devicementioning

confidence: 99%

“…It is clear that Eqs. (8) and (9) are only strictly valid at f max , but the optimum phase shift calculated with Eq. (9) tracks reasonably well with the results obtained with biconjugate matching over a wide frequency range.…”

Section: Power Gain Maximization For a Given Active Devicementioning

confidence: 99%

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Terahertz Sources, Detectors, and Transceivers in Silicon Technologies

Li¹,

Cao²,

Tao³

et al. 2020

Electromagnetic Materials and Devices

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With active devices lingering on the brink of activity and every passive device and interconnection on chip acting as potential radiator, a paradigm shift from "top-down" to "bottom-up" approach in silicon terahertz (THz) circuit design is clearly evident as we witness orders-of-magnitude improvements of silicon THz circuits in terms of output power, phase noise, and sensitivity since their inception around 2010. That is, the once clear boundary between devices, circuits, and function blocks is getting blurrier as we push the devices toward their limits. And when all else fails to meet the system requirements, which is often the case, a logical step forward is to scale these THz circuits to arrays. This makes a lot of sense in the terahertz region considering the relatively efficient on-chip THz antennas and the reduced size of arrays with half-wavelength pitch. This chapter begins with the derivation of conditions for maximizing power gain of active devices. Discussions of circuit topologies for THz sources, detectors, and transceivers with emphasis on their efficacy and scalability ensue, and this chapter concludes with a brief survey of interface options for channeling THz energy out of the chip.

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Section: Power Gain Maximization For a Given Active Devicementioning

confidence: 99%

Section: Power Gain Maximization For a Given Active Devicementioning

confidence: 99%

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Terahertz Sources, Detectors, and Transceivers in Silicon Technologies

Li¹,

Cao²,

Tao³

et al. 2020

Electromagnetic Materials and Devices

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“…This frequency is nearly twice of that of the implemented SiGe:C-based CMOS THz transmitters in 2015 that could emit frequencies up to 0.32 THz. 137,138 TeraFETs have the potential of being realized by CMOS technology and thus provide a promising building block for implementation of compact economical THz cameras. It is observed that such devices show good potential for edge detection and enhanced spatial resolution for THz imaging applications.…”

Section: Antenna-coupled Field-effect Transistors For the Plasmonic Dmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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“…One approach to overcome this hurdle has been to apply a variety of on-chip multiplication [18] and free-space power combining techniques [19]. However, so far, mainly because of the inadequate f T and f MAX of the CMOS and SiGe BiCMOS technologies employed, the reported output power, power added efficiency, and phase noise at frequencies >200 GHz have remained lower than 5 dBm, 0.5%, and −84 dBc/Hz at 1-MHz offset, respectively.…”

Section: N Recent Years Several Foundries Have Reported Sigementioning

confidence: 99%

A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Shopov

Balteanu

Hasch

et al. 2016

IEEE J. Solid-State Circuits

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A 234-261-GHz signal source with record 7.2-dBm output power at 240 GHz and −105 dBc/Hz phase noise at 10-MHz offset is reported. Fabricated in a production 55-nm SiGe BiCMOS process with HBT f T / f MAX of 330/350 GHz, the circuit includes a 120-GHz fundamental frequency VCO with 1.2-V AMOS varactors, a broadband MOS-HBT cascode LO tree driving a divide-by-128 chain, and a doubler with a record drain efficiency of 11.9%. The total power consumption of the signal source is 386 mW resulting in a DC-to-RF efficiency of 1.3%. A detailed discussion of the candidate LO-tree and doubler topologies and of the design methodology, which capitalizes on the MOS-HBT cascode and unique features of the 55-nm SiGe BiCMOS process, is provided. Index Terms-Divider, frequency doubler, J-band circuit, mm-wave circuits, MOS-HBT cascode, SiGe BiCMOS, signal source, VCO.

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A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

Cited by 135 publications

References 36 publications

Terahertz Sources, Detectors, and Transceivers in Silicon Technologies

Terahertz Sources, Detectors, and Transceivers in Silicon Technologies

Review of GaN-based devices for terahertz operation

A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

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