Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device

A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET

“…So far, various device structures have been examined for further improvement in device performance; dual metal gate structures were proposed to improve the gate control over the channel and SCEs . The alternative method to enhance the I on current is to increase the pocket doping are applied in SB‐TFET . The SB‐MOSFET with a full‐depleted pocket doping in between the metal and lightly doped channel region is proposed to improve the tunneling of carrier is successfully fabricated .…”

“…The gate dielectric is confined in 2 nm thickness to attain better sensitivity in gate all around SB‐MOSFET. Furthermore, the advantages of dual metal gate SB‐MOSFET is advantages to reduce ambiploar current in single gate SB device . This paper is focusing on the modeling of hetero‐dielectric (high‐k [HfO 2 ] and low‐k [SiO 2 ]) dual material gate (HDDMG) SB‐MOSFET, where a simplified analytical model has been developed for surface potential, electric field, and threshold voltage with impact of hetero‐gate dielectric.…”

“…14,15 The alternative method to enhance the I on current is to increase the pocket doping are applied in SB-TFET. 16 The SB-MOSFET with a full-depleted pocket doping in between the metal and lightly doped channel region is proposed to improve the tunneling of carrier is successfully fabricated. [17][18][19] In addition, high-k dielectric such as HfO 2 are used in SB-MOSFET to decrease the equivalent oxide thickness and increase the electrical coupling between the Schottky tunnel junction and gate electrode, resulting in better performance of the SB-MOSFET.…”

“…Furthermore, the advantages of dual metal gate SB-MOSFET is advantages to reduce ambiploar current in single gate SB device. 15,16,24 This paper is focusing on the modeling of hetero-dielectric (high-k [HfO 2 ] and low-k [SiO 2 ]) dual material gate (HDDMG) SB-MOSFET, where a simplified analytical model has been developed for surface potential, electric field, and threshold voltage with impact of hetero-gate dielectric. The parabolic approximation method is used to solve the 2-D Poisson's equation with appropriate boundary conditions.…”

Suppression of ambipolar conduction and investigation of RF performance characteristics of gate‐drain underlap SiGe Schottky barrier field effect transistor

“…To overcome these limitations, there is a rehabilitated interest in exploring new devices that uses a conduction mechanism such as tunnelling current along with thermionic current [3][4][5]. A Schottky barrier (SB) FET has been designed as a unique promising solution, mainly for low-power devices due to low off-state current which, becomes an excellent device for ultra-low-power applications [6,7]. Further, the SBFET also suffers from low on-state current which makes it undesirable for radio frequency (RF) performances.…”