Scaling effects on vertical-cavity surface-emitting lasers static and dynamic behavior

Jungo, M.; Sopra, Fabrice Monti di; Erni, Daniel; Baechtold, W.

doi:10.1063/1.1462422

Cited by 32 publications

(5 citation statements)

References 34 publications

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“…Additionally, for a 4 µm aperture device, we see an increase in threshold current to 0.60 mA. This has been explained previously by an increased internal optical loss due to scattering at the oxide layers for small apertures [34][35][36], greater sidewall recombination as device diameter is reduced [17,37,38] and an increased internal temperature [28,39,40] driven by the increased series resistance of small aperture devices. The threshold currents for oxidised QF VCSELs are also plotted in Figure 2, and here we observe a minimum threshold current for a 6 µm aperture QF device, which increases to 2.9 and 4.6 mA for 4 and 18 µm aperture QF devices, respectively.…”

Section: Threshold Currentsupporting

confidence: 79%

Quick Fabrication VCSELs for Characterisation of Epitaxial Material

et al. 2021

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A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial wafer suitability. Initially, sub-mA threshold current VCSEL devices are produced on AlGaAs-based material, designed for 940 nm emission, using processing methods widely employed in industry. From there, stripped-back Quick Fabrication (QF) devices, based on a bridge-mesa design, are fabricated and this negates the need for benzocyclcobutane (BCB) planarisation. Devices are produced with three variations on the QF design, to characterise the impact on laser performance from removing time-consuming process steps, including wet thermal oxidation and mechanical lapping used to reduce substrate thickness. An increase in threshold current of 1.5 mA for oxidised QF devices, relative to the standard VCSELs, and a further increase of 1.9 mA for unoxidised QF devices are observed, which is a result of leakage current. The tuning of the emission wavelength with current increases by ~0.1 nm/mA for a VCSEL with a 16 μm diameter mesa when the substrate is unlapped, which is ascribed to the increased thermal resistance. Generally, relative to the standard VCSELs, the QF methods employed do not significantly impact the threshold lasing wavelength and the differences in mean wavelengths of the device types that are observed are attributed to variation in cavity resonance with spatial position across the wafer, as determined by photovoltage spectroscopy measurements.

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Section: Threshold Currentsupporting

confidence: 79%

Quick Fabrication VCSELs for Characterisation of Epitaxial Material

et al. 2021

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“…The variation of I th is not much affected by r s : On the other hand, Figure 7 shows enhanced differential quantum efficiency when the diffusion coefficient increases, with significantly different behaviour for various spreading coefficients. It must be mentioned at this point that other effects, such as mirror and internal losses, gain or confinement factor also play an important role in determining the VCSELs' steady-state behaviour [26]. However, these effects are included in any simple rate equations model, and we will therefore insist on the role played by effects specific to the presented model.…”

Section: Application To the Analysis Of Diffusion Lossesmentioning

confidence: 98%

Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses

Jungo

Erni

Baechtold

2003

Int J Numerical Modelling

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SUMMARYWe propose a new set of equations describing a cylindrical vertical cavity surface emitting laser (VCSEL) cavity under CW operation, based on the rate equations including lateral carrier diffusion. The only numerical step in the calculation consists in finding the roots of a polynomial expression. This model enables a quasi-instantaneous calculation of the laser's light-current characteristic, including such effects as spatial hole burning, current spreading, inhomogeneous optical intensity distribution, and diffusion losses. An analysis of the VCSELs threshold current and differential quantum efficiency is proposed, which illustrates the interplay between injected current profile and diffusion coefficient.

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“…With rapid development of wireless communication networks, there is also an increasing need for simple, power-efficient and cost-effective transmission and distribution of radio frequency signals over optical fibers [2]. A theoretical analysis of VCSEL laser generation process at 1550 nm was carried out in [2][3][4][5][6][7][8][9][10]. For this purpose, the non-linear Statz-DeMars equations have been studied.…”

Section: Review Of Previous Studiesmentioning

confidence: 99%

“…To construct a theory for the dynamic processes under these conditions, it is necessary to improve the system of Statz-DeMars rate equations by adding the heat conduction equation with heat sources. The temperature model of VCSEL was described in works [2][3][4][5][6][7]. This model takes into account the effect of temperature increase in active domain depending on the injection current and the ambient temperature, and takes into account the temperature dependence of the gain, the pump current, and the barrier transparency.…”

Section: Review Of Previous Studiesmentioning

confidence: 99%

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Investigation of the method of current thermal modulation of the wavelength VCSEL

Miroshnichenko¹,

Arzhanenkova²,

Plotnikov³

2022

Nanosystems: Phys. Chem. Math.

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Subject of investigation.In this paper, we analyzed in detail the thermal mode of the operation of a vertical-cavity surface-emitting laser (VCSEL) used in the experiment. Method. As a part of the work, we carried out a theoretical study of the recurrence relation describing the change in the VCSEL wavelength under the action of specially selected modulation current pulses. The high speed of the device working is determined by the optical demodulation scheme, which is based on using a phase-modulated carrier (the demodulation method used is arctangent demodulation: Phase Generated Carrier (PGC-ATAN)). Main results. Formulas were obtained that determine the frequency, phase, and modulation depth which leads to calculation of the principle of change in the modulated VCSEL wavelength at sampling points. Comparison with experimental data showed that the obtained formulas allow one to choose the optimal thermal mode of VCSEL operation and reliably calculate the characteristics of the modulation process in terms of the carrier phase. Practical significance. The obtained formulas make it possible to calculate the exact characteristics of the modulation process, and the precisely calculated phase of the modulation source. As a result, one can compensate it more effectively when demodulating phase of the interferometer.

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Scaling effects on vertical-cavity surface-emitting lasers static and dynamic behavior

Cited by 32 publications

References 34 publications

Quick Fabrication VCSELs for Characterisation of Epitaxial Material

Quick Fabrication VCSELs for Characterisation of Epitaxial Material

Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses

Investigation of the method of current thermal modulation of the wavelength VCSEL

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