Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

Abstract

A feasible approach is reported to reduce the switching current and increase the nonlinearity in a complementary metal-oxide-semiconductor (CMOS)-compatible Ti/SiN /p -Si memristor by simply reducing the cell size down to sub-100 nm. Even though the switching voltages gradually increase with decreasing device size, the reset current is reduced because of the reduced current overshoot effect. The scaled devices (sub-100 nm) exhibit gradual reset switching driven by the electric field, whereas that of the large devices (≥1 µm) is driven by Joule heating. For the scaled cell (60 nm), the current levels are tunable by adjusting the reset stop voltage for multilevel cells. It is revealed that the nonlinearity in the low-resistance state is attributed to Fowler-Nordheim tunneling dominating in the high-voltage regime (≥1 V) for the scaled cells. The experimental findings demonstrate that the scaled metal-nitride-silicon memristor device paves the way to realize CMOS-compatible high-density crosspoint array applications.

Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

“…Metal oxides such as HfO 2 and Al 2 O 3 are popular host insulators in CBRAM devices owing to their stable and reliable resistive switching characteristics compared to organic materials. Recently, nitride-based resistive switching compounds, such as AlN, ZrN, HfN, NiN, and SiN, have been reported to have excellent non-volatile properties comparable to metal oxides in terms of operation speed, endurance, and retention [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 ]. Especially, AlN is suitable for resistive switching memory owing to its high thermal conductivity and large band gap with good insulating properties [ 29 , 30 , 31 , 32 ] and could be improved by additional approaches such as the scaling, bilayer structure, and doping like oxide-based RRAM.…”

Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory

“…Resistive switching memory (RRAM) has long been studied as a type of high-density storage that can replace NAND flash in academia and industry [1][2][3][4][5][6]. Although there have been many advances in terms of endurance [7], retention [8], and low-power operation [9,10], it has not achieved the good reproducibility, repeatability, and low variability required by industry. As NAND flash was developed with a 3D vertical structure, X-point array type RRAM was no longer able to compete at cost per bit [11].…”

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

“…As yet, metal oxides such as HfO x [ 19 ] and TaO x [ 20 , 21 ] are the leading dielectric materials owing to their excellent memory performances in regards to endurance, retention, variability, and switching speed, in addition to compatibility with complementary metal–oxide–semiconductor (CMOS). As one of the other candidates, nitride-based resistive memory, such as SiN [ 7 , 22 , 23 , 24 , 25 ], ZrN [ 26 , 27 ], AlN [ 28 , 29 ], and BN [ 30 ], has also been reported to have good memory performances.…”