Scaling down and low-frequency noise in MOSFET’s. Are the RTS’s the ultimate components of the 1/f noise?

Brini, J.; Ghibaudo, G.; Kamarinos, G.; Roux-dit-Buisson, O.

doi:10.1063/1.44361

Cited by 11 publications

(9 citation statements)

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“…The low-frequency noise usually has a 1/f frequency spectrum. With the scaling down, recent experimental and theoretical work shows that [170][171][172][173][174][175]:…”

Section: The Noise In Scaled-down and High-density Icsmentioning

confidence: 99%

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How will physics be involved in silicon microelectronics

Kamarinos

Felix

1996

J. Phys. D: Appl. Phys.

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By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the 'semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in 'physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By 'physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) 'scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the 'first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

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“…The low-frequency noise usually has a 1/f frequency spectrum. With the scaling down, recent experimental and theoretical work shows that [170][171][172][173][174][175]:…”

Section: The Noise In Scaled-down and High-density Icsmentioning

confidence: 99%

“…This result is established for devices exhibiting an excellent . This is a theoretical plot of the normalized drain current noise [170][171][172][173][174] stability and a very low dispersion of their microscopic electrical characteristics.…”

Section: The Noise In Scaled-down and High-density Icsmentioning

confidence: 99%

How will physics be involved in silicon microelectronics

Kamarinos

Felix

1996

J. Phys. D: Appl. Phys.

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show abstract

“…The interaction between the oxide traps and the conduction channel is therefore suppressed due to the large separation of most carriers from the interface and the oxide traps. In the ultrascaled SNWTs with the gate area below 0.1 μm 2 , only several traps, or a single trap, or even no trap would be active in the trapping and detrapping process near the Si/SiO 2 interface [9], [77]. Hence, the generation of the exact 1/f noise in a single ultrascaled SNWT through the carrier trapping and detrapping process and its correlated mobility scattering becomes less probable.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…However, the mobility-fluctuated noise still remains. This is evident from the experiments of the RTS noise in small-area devices, where the residual signal after the subtraction of the RTS noise still exhibits a 1/f spectrum[77].…”

mentioning

confidence: 85%

“…Moreover, as the devices continue scaling down, the situation in which a device contains no traps at all could happen. In such a case, the number-fluctuation related noise is thus eliminated with only the mobility-fluctuation related noise left, which obviously can lower down the LFN drastically [77]. Thus, the ratio of the intrinsic device noise to the given BN becomes smaller correspondingly, which may place challenges on the existing measurement setup in the future.…”

Section: Proposed Floating-gate Test Structurementioning

confidence: 99%

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