Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Abstract

High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide semiconductor (CMOS) FETs at the same scale. A scaling trend study revealed that the scaled CNT-based devices, which use graphene contacts, can operate much faster and at much lower supply voltage (0.4 versus 0.7 volts) and with much smaller subthreshold slope (typically 73 millivolts per decade). The 5-nanometer CNT FETs approached the quantum limit of FETs by using only one electron per switching operation. In addition, the contact length of the CNT CMOS devices was also scaled down to 25 nanometers, and a CMOS inverter with a total pitch size of 240 nanometers was also demonstrated.

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

“…To have a better understanding about the electrical properties of this SWNT device, the drain current ( I D ) versus gate voltage ( V G ) are measured at different gate voltages in ambient conditions 1, 29, 30. In all devices we have measured (≈89), there are two types of SWNTs: semiconducting and metallic SWNTs as indicated by the V G modulation of the I D .…”

“…Continuation of Moore's law to the sub‐10‐nm scale requires the development of new technologies for creating electrode nanogaps, in architectures which allow a third electrostatic gate 1, 2, 3, 4. Nanogap engineering of low‐dimensional nanomaterials has the potential to fulfill this need, provided their structures and properties at the moment of gap formation could be controlled, which has been of emerging interest in a variety of fields, ranging from molecular electronics to memories 2, 5, 6, 7, 8, 9, 10.…”

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

“…The approximate transmission probability T s app (E) based on (4) and (6) is used in region 2 if there is only one potential barrier.…”

“…where the subthreshold slope SS = (d log 10 I/dV gs ) −1 can be approximated by simple expressions including fitting parameters [8], [12], [30], [31] or extracted from either the experimental data [3], [4] or numerical calculations [15]. The subthreshold current, I sub , is smoothly connected to the TFE current at V F B .…”

“…Along with FETs based on semiconductor nanowires, carbon-nanotube FETs (CNTFETs) satisfy these requirements [2]- [4]. Downscaling the transistor dimensions goes along with a transformation of ohmic contacts into Schottky contacts [5], [6].…”