Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures

Rana, Abhimanyu; Lu, Haidong; Bogle, Kashinath A.; Zhang, Qi; Vasudevan, Rama K.; Thakare, Vishal; Gruverman, Alexei; Ogale, Satishchandra; Valanoor, Nagarajan

doi:10.1002/adfm.201400110

Cited by 70 publications

(64 citation statements)

References 48 publications

(74 reference statements)

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“…Furthermore, it is innately lead-free in nature. To date, the best quality epitaxial BFO thin films have been achieved generally by using physical vapor deposition (PVD) methods, such as pulsed laser deposition (PLD) 6,8,9 or radio-frequency (RF) sputtering 10,11 , with such films typically demonstrating high spontaneous polarization 5 and resistance switching effects 6,12,13 . To date, the best quality epitaxial BFO thin films have been achieved generally by using physical vapor deposition (PVD) methods, such as pulsed laser deposition (PLD) 6,8,9 or radio-frequency (RF) sputtering 10,11 , with such films typically demonstrating high spontaneous polarization 5 and resistance switching effects 6,12,13 .…”

Section: Introductionmentioning

confidence: 99%

Epitaxial (001) BiFeO₃ thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015

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High quality phase pure (001) epitaxial bismuth ferrite (BiFeO 3 ; BFO) thin films have been realized by chemical solution deposition. A thorough chemical investigation of the precursor molecular changes during gelation reveals that control of the delicate balance between gelation and salt (metal nitrate) precipitation through solvent evaporation is the key to a homogenous gel, necessary to ultimately obtain high-quality films. Spin-coating at 3000 rpm for 30 seconds on a preheated STO(001) substrate (~70°C) and subsequent heating at 90°C leads to a suitable gel, which is then heated to 650°C for crystallization. Pure phase BFO thin films of 150 nm thickness prepared by this route on lanthanum strontium manganite (La 0.67 Sr 0.33 MnO 3 ; LSMO) buffered (001)-SrTiO 3 (STO) substrates are shown to have not only epitaxial nature, but also robust ferroelectric properties with low coercive field. Critically we show that these films can be achieved using stoichiometric 0.25 M precursors (with no Bi excess), thus obviating complexities typically arising from secondary phases associated with precursors having excess Bi. Square hysteresis loops with a high remanent polarization of 2P r =97.8 µC/cm 2 and a low coercive field of 2E c =203.5 kV/cm are obtained at room temperature. Frequency-dependent hysteresis loops reveal a switching mechanism that is nucleation dominated. In addition, polarization direction dependent resistive switching behavior is also observed. The findings here thus show it is possible to realize high-quality bismuth ferrite thin films via chemical process techniques.

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Section: Introductionmentioning

confidence: 99%

Epitaxial (001) BiFeO₃ thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015

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“…[7] This, together with the emergent novel domain structures, as will be discussed later, strongly suggests that the enhanced conductivity is not localized exactly at the domain walls. [28][29][30] To investigate the conduction behavior further, both PFM and c-AFM signals were alternatively collected (see Section 2 for de-tails) with a complete set of DC sample bias voltages employed in the c-AFM channel (Figures 2a-l and Figure S2, Supporting Information). [28][29][30] To investigate the conduction behavior further, both PFM and c-AFM signals were alternatively collected (see Section 2 for de-tails) with a complete set of DC sample bias voltages employed in the c-AFM channel (Figures 2a-l and Figure S2, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Yang

Ren

et al. 2018

Annalen der Physik

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Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71°nonpolar domain walls in BiFeO 3 . Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71°domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.negligible current at the 71°domain walls, [7] which was attributed to the distortion of the polarization structure at the 109 o domain walls. [18,19] Inspired by this intriguing discovery, the race was on to seek novel pathways to enhance the conduction of domain walls to make it technologically relevant. There are various ways to achieve this, such as doping the system with extra oxygen vacancies [20] and artificially creating head-to-head polar domain walls. [21] Recently, based on the charged polar domain wall, a prototype ferroelectric domain wall memory was demonstrated with good retention and robust endurance properties, [16] and subsequently a three-terminal memory device was also demonstrated by using the temporary formation of conductive walls during the reading operation. [22] As the charged domain walls attract increasing research interests, non-charged 71 o domain wall also demonstrates great potential since it is more easy to manipulate. It has been revealed that the previously reported insulating 71 o domain walls can also host large conduction current through the formation of oxygen vacancy in a BFO thin film (40-70 nm) [23] or the fieldinduced twisted domain nucleus in an thinner one (10 nm) [24] .In this study, we report a different approach to form the interesting conduction state near 71 o domain walls. We show that the conducting nano-domains, created near the as-grown 71°domain walls, exhibit a large conduction current in the order of

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“…When the volume fraction of the reversed ferroelectric domains is appropriate, a large number of randomly distributed domain walls promote the conductivity of the heterostructures. In contrast, Rana et al investigated the macroscale and local I–V curves of BiFeO 3 /La 0.67 Sr 0.33 MnO 3 heterostructures with BiFeO 3 thicknesses of 5 and 20 nm and claimed that the domains rather than domain walls controlled the RS behavior. Although the RS behavior was more obvious in the BFO thin films with 20 nm thickness, the piezoelectric response force microscopy (PFM) results showed a lower domain density.…”

Section: Approaches To Improve Rs Propertiesmentioning

confidence: 99%

Resistive Switching Behavior in Ferroelectric Heterostructures

Wang

Bai

2019

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Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

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Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures

Cited by 70 publications

References 48 publications

Epitaxial (001) BiFeO₃ thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Epitaxial (001) BiFeO₃ thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Resistive Switching Behavior in Ferroelectric Heterostructures

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Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures

Cited by 70 publications

References 48 publications

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Resistive Switching Behavior in Ferroelectric Heterostructures

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Epitaxial (001) BiFeO₃ thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Epitaxial (001) BiFeO₃ thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation