Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities

Chobpattana, Varistha; Mates, Thomas E.; Zhang, Jack; Stemmer, Susanne

doi:10.1063/1.4875977

Cited by 23 publications

(23 citation statements)

References 29 publications

(28 reference statements)

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“…[20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] Forming an AlN or AlO x N y layer is advantageous because of its relatively wide band gap and high dielectric constant. 33 Various techniques have been used to form such layers on III-V semiconductors at low processing temperatures, including radio frequency sputtering, [22][23][24][25] thermal- 26 and plasma-enhanced [27][28][29] ALD, cyclic exposure of nitrogen plasma and trimethylaluminum (TMA), [30][31][32] and metal-organic vapor deposition (MOCVD). [33][34][35][36][37] Recently, we reported the use of MOCVD, as a high throughput and cost-effective process, to achieve AlN passivation in situ prior to ALD-based Al 2 O 3 gate oxide formation.…”

Section: -2 Aoki Et Almentioning

confidence: 99%

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

et al. 2015

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This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

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Section: -2 Aoki Et Almentioning

confidence: 99%

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

et al. 2015

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“…The same procedure of nitrogen plasma and TMA treatment has been successful to achieve both the reduction of midgap density of states (D it ) down to 10 12 cm À2 and simultaneous scaling of equivalent oxide thickness with less then 1 nm for InGaAs channels. 11,13 In that case, the reduction of the midgap D it was attributed to the suppression of Ga-O bonding at the interfaces and effective passivation by AlO x N y interfacial layer, which is provided by both TMA and nitrogen plasma. Based on the effectiveness of nitrogen plasma treatment in high-k/ In 0.53 Ga 0.47 As, D it below the conduction band of GaN also appears to be passivated by forming the aluminum oxynitride instead of Ga-O bonds at the Al 2 O 3 /GaN.…”

Section: Resultsmentioning

confidence: 93%

“…This process successfully reduced the frequency dispersion related to midgap D it and effectively passivated high-k/ In 0.53 Ga 0.47 As interface, as shown previously. [11][12][13][14] The samples exposed to the two different surface treatments will be referred to hereafter as hydrogen and nitrogen plasma samples, respectively. Al 2 O 3 was deposited by ALD at 300 C using TMA with deionized water (H 2 O) as the oxidant.…”

Section: Methodsmentioning

confidence: 99%

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Son¹,

Chobpattana²,

McSkimming³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report on in-situ nitrogen plasma cleaning, consisting of alternating cycles of nitrogen plasma and trimethylaluminum prior to the dielectric deposition, as an effective method to passivate Al2O3/GaN interface states. The nitrogen plasma pretreatment reduces the frequency dispersion in capacitance–voltage and the conductance peak in conductance–voltage measurements, compared to interfaces cleaned with a hydrogen plasma pretreatment. It is shown that the decrease of the trap density (Dit) below the conduction band is correlated with the suppression of Ga-O bonding and the formation of an aluminum oxynitride interfacial layer.

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“…This report became a breakthrough for III-V MOSFETs. At present, by incorporating other surface treatments, interface state densities of approximately 10 12 cm −2 eV −1 were reported at equivalent oxide thicknesses less than 1 nm [45].…”

Section: Mosfetmentioning

confidence: 99%

Recent progress in compound semiconductor electron devices

Miyamoto

2016

IEICE Electron. Express

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Compound semiconductor electronic devices have the capability to provide high-speed operation as they have higher mobility than Si. At present, compound semiconductor devices are popular as parts of consumer electronics such as wireless communication devices or satellite television. Introduction of wide bandgap compound semiconductors has increased the use of compound semiconductor devices in base stations of cellular phone systems and as replacements for vacuum tubes. More recently, the research on InGaAs MOSFET has been directed towards realization of its potential as an alternative for silicon. This review explains the present commercialization of compound semiconductor devices in consumer electronics, and its state-of-art results such as the 529-GHz dynamic frequency divider using InGaAs heterojunction bipolar transistors, the 1-THz amplification provided by the InGaAs highelectron-mobility transistor (HEMT), and the power of 3 Wmm −1 provided by the GaN HEMT at 96 GHz. The InGaAs MOSFET as the next candidate for logic circuit components, is also explained.

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Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities

Cited by 23 publications

References 29 publications

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Recent progress in compound semiconductor electron devices

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