Scalable Non-Linear Electrical Model for Industrial GaN HEMT Technologies up to 50 GHz

Callet, Guillaume; Fahkfahk, Seifeddine; Chang, Christophe; Giacomo-Brunel, Valeria Di; Favede, Laurent; Blanck, H.

doi:10.1109/pawr53092.2022.9719682

Cited by 3 publications

(1 citation statement)

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“…Extracting intrinsic and extrinsic parameters from multi-biased measurement results after de-embedding parasitics has been studied [A10]. To account for non-linear operations up to 50 GHz, smallsignal models extracted at different bias points have been improved by including current sources and non-linear capacitances [11]. Passivation effects on the operating frequency of millimeter-wave GaN devices have been investigated using a physics-based model that combines ADS for small signal parameters optimization and HFSS for full-wave simulations [12].…”

Section: Introductionmentioning

confidence: 99%

Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors

Nouri,

El-Ghazaly

2023

IEEE Access

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This work presents a systematic parameter extraction methodology for modeling of millimeterwave transistors. The physics-based parameter extraction approach in this study is included in the waveelectron-transport model to improve the accuracy of the simulation results. The effects of extrinsic parameters on the performance of the device are also analyzed in detail. Skin effects and sharp metallization edge effects as the two physical phenomena that impact the current distribution and the resistance of millimeter-wave transistors are studied thoroughly. Two common electrode layout variations, the T configuration and the fork configuration, are compared. The comparison mainly targeted their performance on upper millimeter bands where physical phenomena like wave-propagation effects are dominant. The output power and the power gain of the transistor for a GaN-HEMT device are simulated and compared with measurements. Results illustrate the influence of parameters and electrode layout design on the accuracy of the modeling approach.INDEX TERMS Parameter extraction methodology, millimeter-wave transistors, electrode layout effects, edge effects, skin effects, physics-based modeling approaches.

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Section: Introductionmentioning

confidence: 99%