Scalable Fabrication of Metallic Nanogaps at the Sub‐10 nm Level

Abstract

Metallic nanogaps with metal-metal separations of less than 10 nm have many applications in nanoscale photonics and electronics. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length-scales. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed.

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

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Conductive Materials with Elaborate Micro/Nanostructures for Bioelectronics

“…In addition, metal nanostructures arrays have been widely used for bioelectronics because of the special advantages in localized surface plasmon resonance. [140][141][142] On this basis, Shen et al proposed a controlled method to synthesize Au NRs and weld them together, as shown in Figure 8c. [143] After synthesizing Au NRs through the seed-mediated growth method, DNA origami was introduced as a template to arrange the anisotropic Au NRs into tip-to-tip dimer structures (Figure 8d).…”

High-Throughput Fabrication of Triangular Nanogap Arrays for Surface-Enhanced Raman Spectroscopy

“…Various nanofabrication methods, such as electron-beam lithography (EBL), extreme-ultraviolet lithography (EUVL), − focused-ion beam (FIB) milling, − breaking and cracking methods, − capillary force-assisted (CFA) lithography, , and block copolymer lithography , have been used to pattern ordered metallic arrays with SERS-active nanostructured motifs. However, EBL, EUVL, and FIB methods are too costly and time-consuming for fabricating dense nanostructure arrays over wide areas.…”