Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM Analyses

Resca, Davide; Raffo, Antonio; Santarelli, Alberto; Vannini, G.; Filicori, F.

doi:10.1109/tmtt.2008.2011208

Cited by 58 publications

(59 citation statements)

References 20 publications

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“…In this context, coupling phenomena associated with the doped semiconductor substrate are not taken into account, as they have been found generally negligible [13]- [16]. This assumption is further confirmed by the experimental validation provided in Section IV.…”

Section: Modeling and Analytical Identification Of The Device Lummentioning

confidence: 68%

See 1 more Smart Citation

GaN HEMT Noise Model Based on Electromagnetic Simulations

Nalli

Raffo

Crupi

et al. 2015

IEEE Trans. Microwave Theory Techn.

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This paper presents a new approach for the definition and identification of a transistor model suitable for low-noise amplifier (LNA) design. The resulting model is very robust to layout modifications (i.e., source degeneration) providing accurate predictions of device noise-performance and small-signal parameters. Moreover, the described procedure is very robust since it does not require any numerical optimization, with possibly related problems like local minima and unphysical model parameters. The adopted model topology is based on a lumped element parasitic network and a black-box intrinsic device, which are both identified on the basis of full-wave lectromagnetic simulations, as well as noise and -parameter measurements. The procedure has been applied to three GaN HEMTs having different peripheries and a Ku-band LNA has been designed, demonstrating a very good agreement between measurements and predicted results

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Section: Modeling and Analytical Identification Of The Device Lummentioning

confidence: 68%

“…3(c). The matrix associated with this representation can be expressed by (11) where (12) Starting from , the elements and can be extracted by the linear regression of (13) and…”

Section: Finger Region Parameter Extractionmentioning

confidence: 99%

GaN HEMT Noise Model Based on Electromagnetic Simulations

Nalli

Raffo

Crupi

et al. 2015

IEEE Trans. Microwave Theory Techn.

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“…1 shows a conventional FET model: the linear extrinsic parasitic network accounts for metallization and dielectric losses as well as for the associated inductive and capacitive effects. The characterization of the parasitic part can be carried out by means of lumped elements [5] or by performing device layout electromagnetic simulations [6]- [7]. The active area corresponding to the intrinsic device is composed of two parts [3] which can be considered strictly in parallel: a "capacitive core" which accounts for the nonlinear dynamic phenomena and a "resistive core" responsible for the dc and low-frequency I\V device behavior.…”

Section: The Adopted Design Approachmentioning

confidence: 99%

A new approach to Class-E power amplifier design

Musio¹,

Vadalà²,

Scappaviva³

et al. 2011

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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An innovative, recently introduced, methodology for microwave power amplifier design, is here extended to switchingmode Class-E amplifier operation. Such a technique is based on a complete and accurate electron device (ED) characterization, which is provided by both direct large-signal low-frequency I/V measurements, performed by means of a relatively simple lowcost setup, and a model-based description of nonlinear reactive effects related to ED capacitances. In order to verify the proposed design methodology, a Class-E power amplifier (PA) has been designed.

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“…The determination and subsequent de-embedding of the extrinsic elements is essential to access the performance of the intrinsic FET that is not directly measurable, since the intrinsic section of the FET is experimentally inaccessible. The extrinsic elements are usually determined using "cold" S-parameter measurements (V DS = 0 V, i.e., passive device) [10][11][12][13][14][15][16], passive test structures [13][14][15][16][17], and full-wave electromagnetic simulations [18][19][20][21]. In practice, the "cold" approach is the most used, since it does not require additional dummy structures or detailed information about the FET layout.…”

Section: Introductionmentioning

confidence: 99%

Effects of Gate-Length Scaling on Microwave MOSFET Performance

2017

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This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length.

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Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM Analyses

Cited by 58 publications

References 20 publications

GaN HEMT Noise Model Based on Electromagnetic Simulations

GaN HEMT Noise Model Based on Electromagnetic Simulations

A new approach to Class-E power amplifier design

Effects of Gate-Length Scaling on Microwave MOSFET Performance

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