Scalability and Electrical Properties of Germanium Oxynitride MOS Dielectrics

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

“…3(a)) has been achieved at a gate bias of V fb +1 V, which compares favorably with the previously measured leakage currents using MBE-Al 2 O 3 / Ga 2 O 3 (Gd 2 O 3 ) on Ge [11]. Compared to those with other commonly used dielectrics, such as GeO x N y [12], GeO x N y plus HfO 2 [1,[13][14][15], Si plus HfO 2 [16,17], and HfO 2 [18], several orders of reduction in leakage current density are attained in this work, as shown in Fig. 3(b), again indicating the excellence of the Al 2 O 3 / Y 2 O 3 and the Y 2 O 3 /Ge interface withstanding the 500 1C anneal.…”

HfO2/GeO N /Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment

“…As a result, an unacceptable D it is always revealed for the Ge-MOS capacitor (MOSCAP) [15]. Nitrogen incorporation into GeO 2 , which causes the formation of GeO x N y , has been used to improve its stability against thermal and wet treatments [16,17]. It was also found that nitridation of Ge surfaces prior to high-k film deposition is effective in suppressing Ge diffusion into high-k film and improving performance of Ge-based devices [18].…”

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

“…[11][12][13] But at the same time, a large amount of fixed charge was introduced at the interface, which caused flat band voltage (V FB ) shifting that has not been systematically investigated yet. 6,[14][15][16] Fixed charges of high density would cause lower mobility by strong coulombic scattering and shift of the threshold voltage. 17,18 High temperature (450 C) oxygen annealing was tried to improve the performance of metal-oxide-semiconductor (MOS) capacitor.…”