2007
DOI: 10.1063/1.2430652
|View full text |Cite
|
Sign up to set email alerts
|

Sc modified multiferroic BiFeO3 thin films prepared through a sol-gel process

Abstract: Multiferroic thin films with the general formula BiFe1−xScxO3 (x=0.0, 0.1, 0.3, and 0.5mol%) (BFS) were synthesized on Pt∕Ti∕SiO2∕Si substrates through a sol-gel deposition method. From the x-ray diffraction (XRD) analysis, it was observed that the unit cell volume increased upon Sc doping up to 0.3mol%. Impure phase appeared for the BFS (Sc: 0.5mol%) films. Leakage current, ferroelectric, and magnetic properties were also found to improve for Sc doping up to 0.3mol%. Room temperature magnetic coercive field f… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

3
45
0

Year Published

2007
2007
2017
2017

Publication Types

Select...
10

Relationship

1
9

Authors

Journals

citations
Cited by 113 publications
(48 citation statements)
references
References 15 publications
(16 reference statements)
3
45
0
Order By: Relevance
“…In our previous study [8], relatively high remanent polarization of 89 μC/cm 2 was obtained at the low temperature of 93 K in polycrystalline BiFeO 3 film annealed at 923 K. The leakage current density of the polycrystalline BiFeO 3 film was reduced on the order of 10 −1 A/cm 2 to 10 −8 A/cm 2 at 150 kV/cm by decreasing the measuring temperature to 93 K. It is expected that the reducing the leakage current density and realize ferroelectric hysteresis loops of a well-saturated shape at room temperature. One way to reduce the leakage current density is to add La or Nb for the A-site or Mn, Cr or Ti for the B-site [9][10][11][12][13][14][15][16][17]. The Mn atom is the leading candidate for reducing the leakage current.…”
Section: Introductionmentioning
confidence: 99%
“…In our previous study [8], relatively high remanent polarization of 89 μC/cm 2 was obtained at the low temperature of 93 K in polycrystalline BiFeO 3 film annealed at 923 K. The leakage current density of the polycrystalline BiFeO 3 film was reduced on the order of 10 −1 A/cm 2 to 10 −8 A/cm 2 at 150 kV/cm by decreasing the measuring temperature to 93 K. It is expected that the reducing the leakage current density and realize ferroelectric hysteresis loops of a well-saturated shape at room temperature. One way to reduce the leakage current density is to add La or Nb for the A-site or Mn, Cr or Ti for the B-site [9][10][11][12][13][14][15][16][17]. The Mn atom is the leading candidate for reducing the leakage current.…”
Section: Introductionmentioning
confidence: 99%
“…Similar results, i.e., pronounced MD effects with their measuring frequency dependence, were also observed in a sol-gel-processed Sc-modified BiFeO 3 film. 15 The observed MD effect ͑magnetocapacitance͒ can be explained in terms of the magnetically induced polarization. The application of a longitudinal bias field ͑⌬H 3 ͒ induces a magnetostriction in the NZFO layer along the direction 3.…”
mentioning
confidence: 99%
“…Compared to the bulk ceramics, the coercive fields of the synthesized nanoparticles are much smaller and almost negligible for Bi 0.9 Gd 0.1 Fe 1−x Ti x O 3 (x= 0.20) nanoparticles (Table 1). This actually indicates their soft nature and better suitability for device applications [46].…”
Section: Methodsmentioning
confidence: 92%