Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

Ultra-Stable, Endurable, and Flexible Sb2TexSe3–x Phase Change Devices for Memory Application and Wearable Electronics

“…Thus, the resistance and the thermal stability of Sb 2 Te x Se 3– x (STSe) could be elevated. In addition, Se can be utilized to improve the crystallization temperature of Sb 4 Te and overcome the thermal stability limit of GeTe for high-temperature applications, with phase change temperature elevated more than 100 K after proper Se content doping. , Beyond this, Se-based PCMs, such as Ge 2 Sb 2 Se 4 Te 1 and Sb 2 Se 3 , show a good application prospect in the field of reconfigurable non-volatile metasurfaces ,− and low-loss waveguide transmission in photonic integrated circuits . Moreover, Se has higher electronegativity than Te due to its stronger metalloid character, indicating the stronger interaction between Sb and Se than that between Sb and Te accompanied with stable mechanical properties.…”

Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory

“…17 Very recently, Sb 44 Te 11 Se 45 was proposed for PCM due to its brilliant thermal stability. 18 In fact, the phase change properties such as thermal stability, crystallization speed, and amorphous/crystalline resistivities can be substantially tailored by the change in composition of Sb-Te-Se ternary system. Nevertheless, the z E-mail: lvyegang@nbu.edu.cn effect of Sb-Te-Se composition on its thermal stability, electrical properties, crystalline structure and bond environments is still unclear.…”