Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Abstract

Flexible memory and wearable electronics represent an emerging technology, thanks to their reliability, compatibility, and superior performance. Here, an Sb2Te x Se3–x (STSe) phase change material was grown on flexible mica, which not only exhibited superior nature in thermal stability for phase change memory application but also revealed novel function performance in wearable electronics, thanks to its excellent mechanical reliability and endurance. The thermal stability of Sb2Te3 was improved obviously with the crystallization temperature elevated 60 K after Se doping, for the enhanced charge localization and stronger bonding energy, which was validated by the Vienna ab initio simulation package calculations. Based on the ultra-stability of STSe, the STSe-based phase change memory shows 65 000 reversible phase change ability. Moreover, the assembled flexible device can show real-time monitoring and recoverability response in sensing human activities in different parts of the body, which proves its effective reusability and potential as wearable electronics. Most importantly, the STSe device presents remarkable working reliability, reflected by excellent endurance over 100 s and long retention over 100 h. These results paved a novel way to utilize STSe phase change materials for flexible memory and wearable electronics with extreme thermal and mechanical stability and brilliant performance.

Graphite Carbon-Doped Sb2Te Nanostructures for Phase-Change Memory Applications

“…Meanwhile, the Sb−O bond was observed, which is attributed to film surface oxidation. 52,53 The bond energies of Sb and Te shift to higher values, which is similar to the case of C-doped Sb 2 Te 3 42 and C-doped GST. 54 C−Sb or C−Te bonds with a large electronegativity difference (C: 2.55; Sb: 2.05; Te: 2.10) 55 easily form C-Sb 2 Te.…”

A polar-switchable and controllable negative phototransistor for information encryption

“…Furthermore, when combined with PPC, NPC acts as a complementary component, expanding the functionality of conventional optoelectronic devices and enabling the construction of multifunctional optoelectronic devices. 18–23 However, it should be noted that the reported origin of NPC phenomena is influenced by various external factors, such as temperature, humidity, defect concentration. 24 All these factors exhibit instability and a lack of controllability, posing challenges in achieving precise and controllable NPC and PPC performance within a single sample.…”

Microstructure characterization, phase transition, and device application of phase-change memory materials

“…Figure 9(d) shows a schematic of the flexible device structure. Moreover, Li et al reported improved thermal stability in the Sb 2 Te x Se 3−x (STSe) PCM for applications as well as wearable electronics [ 42 ]. As shown in Figure 9(e,f) , the STSe device has an exceptional endurance of over 100 s and a longer retention of over 100 h, demonstrating its excellent operational reliability.…”

“…(f) Variations in device resistance as a function of time. Reproduced by permission from [ 42 ], copyright [2022, ACS].…”