Sb2Se3 film with grain size over 10 µm toward X-ray detection

Wang, Chong; Du, Xiaolong; Wang, Siyu; Deng, Hui; Chen, Chao; Niu, Guangda; Pang, Jincong; Li, Kanghua; Lu, Shuaicheng; Xiang, Lin; Song, Haisheng; Tang, Jiang

doi:10.1007/s12200-020-1064-5

Cited by 8 publications

(5 citation statements)

References 49 publications

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“…33 GeS thin-lm solar cells have demonstrated great potential for indoor photovoltaics arising from their wide bandgap of 1.7 eV that matches well with the emission spectra of commonly used indoor light sources ranging from 400 to 700 nm. [34][35][36] Furthermore, the capacity to continuously tune the bandgap of Ge-based monochalcogenides by alloying GeS with GeSe allows the realization of optimal-bandgap single-junction solar cells and multi-junction cells that boost the ultimate limit of the photovoltaic efficiency from 33% (single-junction) to 42% (tandem). 32 However, all current GeS and GeSe thin lms have consistently been fabricated by vacuum-assisted vapor deposition that suffers from high-cost vacuum apparatus and a lack of physical exibility.…”

Section: Introductionmentioning

confidence: 99%

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

Miao

Wang

et al. 2022

Chem. Sci.

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Section: Introductionmentioning

confidence: 99%

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

Miao

Wang

et al. 2022

Chem. Sci.

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“…The similar phenomenon has also been observed in other 1D crystal-structural materials, such as Sb 2 Se 3 and Sb 2 S 3 . [67][68][69][70][71][72][73][74] When the post-annealing temperature increases beyond 260 °C, the grains start to grow fast and become rounded (Figure 2e-h), attributed to the intensive fusion of Te and Se atoms in the film. However, when the annealing temperature comes over 300 °C, the excessive annealing temperatures would increase atomic fluidity and destroy the crystal structure.…”

Section: Materials Properties Of Te 07 Se 03 Filmsmentioning

confidence: 99%

Te_xSe_1–x Photodiode Shortwave Infrared Detection and Imaging

Zheng

et al. 2023

Advanced Materials

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Short‐wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short‐wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal–oxide–semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low‐cost, high‐performance, and high‐stability TexSe1–x short‐wave infrared photodiode detector is reported. The TexSe1–x thin film is fabricated through CMOS‐compatible low‐temperature evaporation and post‐annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad‐spectrum response of 300–1600 nm, a room‐temperature specific detectivity of 1.0 × 1010 Jones, a −3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te‐based photodiode devices and a dark current density 7 orders of magnitude smaller than Te‐based photoconductive and field‐effect transistor devices. With a simple Si3N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized TexSe1–x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS‐compatible infrared imaging chips.

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“…[ 8 ] Likewise, Sb 2 Se 3 has been tested as photocathodes for solar water splitting, [ 9,10 ] photodetectors, [ 11 ] photonic circuits, [ 12 ] and X‐ray detectors. [ 13 ] For the application of Sb 2 Se 3 in PEC, the theoretical maximum photocurrent density estimated is 40.9 mA cm −2 assuming 100% of incident photon‐to‐current conversion efficiency (IPCE). [ 10 ] A Sb 2 Se 3 photocathode is stable in acid mediums, so H 2 SO 4 is commonly used.…”

Section: Introductionmentioning

confidence: 99%

Antimony Selenide Thin Films by Electrodeposition: Influence of Deposition Conditions and Post‐Deposition Thermal Treatment on Physical and Photoelectrochemical Properties

García

Cerdán‐Pasarán

Madrigal

2022

Physica Status Solidi (a)

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Herein, Sb2Se3 thin films are obtained by the electrodeposition technique from a single bath on fluorine‐doped tin oxide (FTO) substrates. The electrodeposition conditions such as precursor concentration and applied potential, as well as the annealing temperature, and its influence on the structural, morphological, optical, and photoelectrochemical properties are analyzed. From the cyclic voltammetry measurements, the range of deposition potential is established and from the sweep rate variation, an irreversible and diffusion‐controlled process is assumed. With the chronoamperometric curves, an instantaneous nucleation is concluded. The Se/Sb ratio variation of the precursor solutions demonstrate that the 0.7 ratio is optimal to obtain Sb2Se3 stoichiometric thin films. The conductivity decreases with the increase of the deposition potential, while the highest photosensitivity is obtained with the film deposited at −0.75 V versus the saturated calomel electrode. Regarding the annealing temperature, a compact homogeneous film is obtained in the range from 325 to 425 °C. Therefore, the suitable properties of Sb2Se3 films obtained by electrodeposition and the establishment of optimized deposition conditions for its use in photoelectrochemical cells (PECs) are demonstrated.

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Sb2Se3 film with grain size over 10 µm toward X-ray detection

Cited by 8 publications

References 49 publications

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

Te_xSe_1–x Photodiode Shortwave Infrared Detection and Imaging

Antimony Selenide Thin Films by Electrodeposition: Influence of Deposition Conditions and Post‐Deposition Thermal Treatment on Physical and Photoelectrochemical Properties

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Sb2Se3 film with grain size over 10 µm toward X-ray detection

Cited by 8 publications

References 49 publications

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

TexSe1–x Photodiode Shortwave Infrared Detection and Imaging

Antimony Selenide Thin Films by Electrodeposition: Influence of Deposition Conditions and Post‐Deposition Thermal Treatment on Physical and Photoelectrochemical Properties

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Te_xSe_1–x Photodiode Shortwave Infrared Detection and Imaging