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1967
DOI: 10.1063/1.1709985
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Saw and Polishing Damage in Silicon Crystal Wafers by X-Ray Topography

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1969
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Cited by 7 publications
(1 citation statement)
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“…In the previous studies of mechanically induced surface damage in Si, the depth of damage has been measured using a variety of techniques, e.g., the x -r a y rocking-curve method (6), the etching rate method (8), the photomagnetoelectric method (6), the photoconductivity decay method (6), step-etching with x -r a y topography (1,2,16), transmission electron microscopy (5,7), metallographic taper-sectioning method (17), etc. Only the last three methods can show the actual damage distribution.…”
mentioning
confidence: 99%
“…In the previous studies of mechanically induced surface damage in Si, the depth of damage has been measured using a variety of techniques, e.g., the x -r a y rocking-curve method (6), the etching rate method (8), the photomagnetoelectric method (6), the photoconductivity decay method (6), step-etching with x -r a y topography (1,2,16), transmission electron microscopy (5,7), metallographic taper-sectioning method (17), etc. Only the last three methods can show the actual damage distribution.…”
mentioning
confidence: 99%