Sample Cooling and Rotation at Ultra-Low Temperatures and High Magnetic Fields

Xia, J. S.; Sullivan, N. S.; Pan, W.; Störmer, H. L.; Tsui, D. C.

doi:10.1142/9789812777805_0020

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Xia et al have also built a He-3 immersion cell with a hydraulically driven rotator stage for tilted field measurements. 50 Since cooling electronic systems to ultralow temperatures is increasingly important for the study of fragile electronic order, besides the immersion cell technology there are also efforts to develop alternative cooling techniques, [51][52][53][54] some of which are designed on cryogen free platforms.…”

Section: Cooling Electrons Below 10 Mk and Sample State Preparationmentioning

confidence: 99%

Exploring Quantum Hall Physics at Ultra-Low Temperatures and at High Pressures

Csáthy

2020

Fractional Quantum Hall Effects

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The use of ultra-low temperature cooling and of high hydrostatic pressure techniques has significantly expanded our understanding of the two-dimensional electron gas confined to GaAs/AlGaAs structures. This chapter reviews a selected set of experiments employing these specialized techniques in the study of the fractional quantum Hall states and of the charged ordered phases, such as the reentrant integer quantum Hall states and the quantum Hall nematic. Topics discussed include a successful cooling technique used, novel odd denominator fractional quantum Hall states, new transport results on even denominator fractional quantum Hall states and on reentrant integer quantum Hall states, and phase transitions observed in half-filled Landau levels.

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Section: Cooling Electrons Below 10 Mk and Sample State Preparationmentioning

confidence: 99%

Exploring Quantum Hall Physics at Ultra-Low Temperatures and at High Pressures

Csáthy

2020

Fractional Quantum Hall Effects

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“…One example of a success story in the development of new materials that allowed new classes of quantum devices to be created was the development and perfection of high-mobility GaAs/AlGaAs heterostructures, made possible by the invention of modulation doping. Improvement of these devices over a period of 25 years led to improvements in mobility of over four orders of magnitude 27,39 and enabled the discovery of novel correlated states of the electrons at low temperatures, such as the fractional quantum Hall effect, and the eventual development of new classes of electronic devices with an unprecedented degree of perfection. While this process began with a new insight, much of the continuing progress has been the result of painstaking gradual improvements in the technology of molecular-beam epitaxy of these materials.…”

Section: The Future Of Quantum Computing: Devices Fabricated With Atomentioning

confidence: 99%

Can We Build a Large-Scale Quantum Computer Using Semiconductor Materials?

Kane¹

2005

MRS Bull.

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The following article is based on the Symposium X presentation given by Bruce E. Kane (University of Maryland) at the 2004 Materials Research Society Spring Meeting in San Francisco. Quantum computing has the potential to revolutionize our ability to solve certain classes of difficult problems. A quantum computer is able to manipulate individual two-level quantum states (“qubits”) in the same way that a conventional computer processes binary ones and zeroes. Here, Kane discusses some of the most promising proposals for quantum computing, in which the qubit is associated with single-electron spins in semiconductors. While current research is focused on devices at the one- and two-qubit level, there is hope that cross-fertilization with advancing conventional computer technology will enable the eventual development of a large-scale (thousands of qubits) semiconductor quantum computer.The author focuses on materials issues that will need to be surmounted if large-scale quantum computing is to be realizable. He argues in particular that inherent fluctuations in doped semiconductors will severely limit scaling and that scalable quantum computing in semiconductors may only be possible at the end of the road of Moore's law scaling, when devices are engineered and fabricated at the atomic level.

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Sample Cooling and Rotation at Ultra-Low Temperatures and High Magnetic Fields

Cited by 2 publications

References 6 publications

Exploring Quantum Hall Physics at Ultra-Low Temperatures and at High Pressures

Exploring Quantum Hall Physics at Ultra-Low Temperatures and at High Pressures

Can We Build a Large-Scale Quantum Computer Using Semiconductor Materials?

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