Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.PACS numbers: 03.67. Lx, 73.20.Hb, 85.35.Gv, 71.55.Cn Spin qubits in semiconductors (e.g. GaAs, Si) are among the most promising physical systems for the eventual fabrication of a working quantum computer (QC). There are two compelling reasons for this perceived importance of semiconductor spin qubits: (i) electron spin has very long coherence times, making quantum error correction schemes feasible as a matter of principle; (ii) semiconductor structures provide inherently scalable solid state architectures, as exemplified by the astonishing success of the microelectronics technology in increasing the speed and efficiency of logic and memory operations over the last fifty years (i.e. 'Moore's Law'). These advantages of semiconductor quantum computation apply much more to Si than to GaAs, because the electron spin coherence time can be increased indefinitely (up to 100 ms or even longer in the bulk) in Si through isotopic purification [1, 2, 3] whereas in GaAs the electron spin coherence time is restricted only to about 10 µs [1, 2, 4]. It is thus quite ironic that there has been much more substantial experimental progress [4] in electron spin and charge qubit manipulation in the III-V semiconductor quantum dot systems [5] than in the Si:P Kane computer architecture [6]. In addition to the long coherence time, the Si:P architecture has the highly desirable property of microscopically identical qubits which are scalable using the Si microelectronic technology. The main reason for the slow experimental progress in the Kane architecture is the singular lack of qubit-specific quantum control over an electron which is localized around a substitutional P atom in the bulk in a relatively unknown location. This control has turned out to be an impossibly difficult experimental task in spite of impressive developments in materials fabrication and growth in the Si:P architecture using both the 'top-down' and the 'bottom-up' techniques [7]. It is becoming manifestly clear that new ideas are needed in developing quantum control over single qubits in the Si:P QC architecture.In this Letter we suggest such a new idea, establishing convincingly that the use of a magnetic field, along with an electric field, would enable precise identification, manipulation and entanglement of donor qubits in the Si:P quantum computer architecture by allowing control over the spatial location of the electron as it is pulled from its shallow hydrogenic donor state to the Si/SiO 2 interface by an electric field. Additionally, the magnet...