2021
DOI: 10.1109/jmems.2021.3069397
|View full text |Cite
|
Sign up to set email alerts
|

Sacrificial Materials and Release Etchants for Metal MEMS That Reduce or Eliminate Hydrogen-Induced Residual Stress Change

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 48 publications
0
2
0
Order By: Relevance
“…While there are various methods to measure the film stress like XRD [15][16][17][18][19], PL Raman, wafer curvature technique [20], MEMS test structure [21,22], passive strain sensors [23], we observed that all of the methods are not equivalent. XRD measures the microstress in a grain of poly-crystalline material.…”
Section: Strain Gauge Design For Thin Film Stress Measurementmentioning
confidence: 86%
“…While there are various methods to measure the film stress like XRD [15][16][17][18][19], PL Raman, wafer curvature technique [20], MEMS test structure [21,22], passive strain sensors [23], we observed that all of the methods are not equivalent. XRD measures the microstress in a grain of poly-crystalline material.…”
Section: Strain Gauge Design For Thin Film Stress Measurementmentioning
confidence: 86%
“…It is found that the residual stress has an important effect on the stiffness of the film, significantly changing the first natural frequency of PMUT. BIE Xiaorui et al systematically studied the frequency drift law of MSRA in the temperature range of 0 ~50°C through finite element simulation [15] . In addition, the influence of changes in package structural parameters and material properties on MSRA frequency drift is analyzed.…”
Section: Introductionmentioning
confidence: 99%