S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs

Wu, J-W.; Chowdhury, Sauvik; Naik, Harsh; Picard, Jean‐Paul; Lee, N.; Hitchcock, Collin; Lu, James; Chow, T. Paul

doi:10.1109/lec.2014.6951568

Cited by 2 publications

(1 citation statement)

References 5 publications

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“…Comfortingly, monolithic integrated bidirectional switches would be considerable alternatives for overcoming the shortcomings of the above BPS composed of discrete devices. [19][20][21][22][23][24][25][26] In particular, galliumnitride (GaN) high electron mobility transistor (HEMT) 27) BPSs with single-gate half-controlled capabilities [28][29][30][31][32][33] and dual gate fully-controlled capabilities [34][35][36][37][38][39][40][41] have the opportunity to further improve the performance of the abovementioned power electronics applications. It is worth noting that the reported dual gate fully-controlled BPSs [34][35][36][37][38][39][40][41] show high turn-on voltage (V ON ) and low threshold voltage (V TH ) so that diode modes and bi-directional conduction mode result in high power consumption.…”

Section: Introductionmentioning

confidence: 99%

Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage

Peng,

Mao,

et al. 2024

Jpn. J. Appl. Phys.

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A monolithic fully-controlled High Electron Mobility Transistor (HEMT) bidirectional power switch (FC-HEMT BPS) is studied and implemented for ultra-low turn-on voltage and high threshold voltage. The alternately embedded recess Schottky barrier diodes with p-GaN gate HEMTs in the common active region is a distinctive feature of the proposed device. The FC-HEMT BPS is a sophisticated device with two independent gate controls, capable of operating in four distinct modes. Its flexibility in managing current and voltage in the first and third quadrants makes it versatile for a range of applications in power electronics. The proposed device offers notable advantages over conventional counterparts, including reduced turn-on voltage VON-D of ~0.4 V in diode modes and the elimination of turn-on voltage VON-B (i.e., 0 V) in bidirectional conduction mode. These features make it a promising solution for efficient power electronics applications.

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