Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage
Guoliang Peng,
Wei Mao,
Shihao Xu
et al.
Abstract:A monolithic fully-controlled High Electron Mobility Transistor (HEMT) bidirectional power switch (FC-HEMT BPS) is studied and implemented for ultra-low turn-on voltage and high threshold voltage. The alternately embedded recess Schottky barrier diodes with p-GaN gate HEMTs in the common active region is a distinctive feature of the proposed device. The FC-HEMT BPS is a sophisticated device with two independent gate controls, capable of operating in four distinct modes. Its flexibility in managing current and … Show more
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