RVS large format arrays for astronomy

Starr, Barry Michael; Mears, Lynn; Fulk, C.; Getty, J.T.; Beuville, E.; Boe, Raymond; Tracy, Christopher; Corrales, E.; Kilcoyne, S.P.; Vampola, John; Drab, John; Peralta, Richard; Doyle, Christy

doi:10.1117/12.2233033

Cited by 8 publications

(5 citation statements)

References 11 publications

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“…In the development of the pixel size and array size of HgCdTe FPA at Raytheon Vision Systems in recent years, it can be seen in Figure 3b that the detector pixel size has been reduced from the initial 61 µm to 20 µm, 8 µm, and 5 µm today. In contrast, the array sizes have been expanding from the initial 40 × 16, 64 × 64 to 2 K × 2 K, 4 K × 4 K, and even 8 K × 8 K nowadays, which shows the decreased pixel pitch and the increased array size [17,18]. Similarly, Raytron Technology [19] has successfully developed infrared detector chips with pixel size in a sequence of 35 Additionally, the overall area of the detector has not changed much.…”

Section: Lightweight and Miniaturizationmentioning

confidence: 99%

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Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Jiao

Zhao

Pan

et al. 2023

Sensors

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With the development of infrared detection and imaging technology, infrared cameras (IRCs) play an important role in many fields, such as military, industry, and civilian. Additionally, the requirements for the size, performance, and intelligence of IRCs are becoming more and more strict. Consequently, the associated research and development (R&D) of IRCs is gradually focused on the aspects of miniaturization, high performance, intelligence, low power consumption, and low cost, involving many frontier fields, including artificial intelligence, new materials, new optical systems, and electronics systems. In fact, there are continual studies on intelligent SWaP3 IRCs, but unfortunately, a systematic arrangement and analysis are lacking. Therefore, a systematical and comprehensive review for the developments and core technologies of the intelligent SWaP3 IRCs is really needed. In this paper, in terms of the aforementioned requirements, we conduct a review and analysis of current intelligent SWaP3 IRCs based on 90 literature and statistics in recent decades to provide the relevant developers with a helpful reference for facilitating the indicator optimization of intelligent SWaP3 IRCs with new developed technologies. We analyze the development of SWaP3 IRCs in the aspects of lightweight, miniaturization, low price, and high performance, including hyperspectral resolution, high spatial resolution, large field of view (FOV), and wide dynamic elaborately. Moreover, the development in low power consumption and intelligence is also discussed in detail. Additionally, we briefly summarize the primary applications of intelligent SWaP3 IRCs in military, scientific, and civil. Then, the core technologies comprising high-integration, lightweight, hyperspectral imaging (HSI), low-power consumption, as well as the realization of high performance such as high-resolution, high-frame, and wide-dynamic range of SWaP3 IRCs are discussed and analyzed in detail. Finally, we prospect for the intelligent SWaP3 IRCs that it is necessary to continuously expand the concept of SWaP3 by reliability, stability, extensibility, and safety. In addition, it is useful to embed cutting-edge technologies such as small pixel pitch array, multi-sensors fusion, and deploy intelligent algorithms to IRCs. Additionally, the improvement of the whole machine from multi-dimension such as chip, camera, and system is expected and needs to be taken more seriously. It is hoped that this paper can provide a reference for the R&D of intelligent SWaP3 IRCs in the future.

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Section: Lightweight and Miniaturizationmentioning

confidence: 99%

“…In other words, it can increase the number of focal plane pixels without changing the size area, thus increasing the resolution. [17,18].…”

Section: Lightweight and Miniaturizationmentioning

confidence: 99%

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Jiao

Zhao

Pan

et al. 2023

Sensors

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“…In a conventional source-follower HgCdTe array such as the Teledyne HxRG family 5 or the Raytheon Virgo, 6 there are two gains are of interest: the voltage gain (which has units of µV /ADU) and the charge gain (which has units of e − /ADU). The charge gain is related to the voltage gain through Q = CV where C is the integrating node capacitance (the sum of the photodiode and ROIC capacitances) and has a typical value of 20 to 40 f F .…”

Section: Avalanche Gain Charge Gain and The Excess Noise Factormentioning

confidence: 99%

“…While the operation of the SAPHIRA APD array is very similar to that of conventional HgCdTe arrays such as the Teledyne HAWAII series 5 and the Raytheon Virgo, 6 there are some important differences. The conventional arrays are normally operated at a bias of a few hundred mV , occasionally up to a volt, and the full bias voltage between the substrate and the node is within the dynamic range of the readout circuit.…”

Section: Introductionmentioning

confidence: 99%

Overview of the SAPHIRA detector for adaptive optics applications

Goebel

Hall

Guyon³

et al. 2018

J. Astron. Telesc. Instrum. Syst.

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We discuss some of the unique details of the operation and behavior of Leonardo SAPHIRA detectors, particularly in relation to their usage for adaptive optics wavefront sensing. SAPHIRA detectors are 320×256@24 µm pixel HgCdTe linear avalanche photodiode arrays and are sensitive to 0.8-2.5 µm light. SAPHIRA arrays permit global or line-by-line resets, of the entire detector or just subarrays of it, and the order in which pixels are reset and read enable several readout schemes. We discuss three readout modes, the benefits, drawbacks, and noise sources of each, and the observational modes for which each is optimal. We describe the ability of the detector to read subarrays for increased frame rates, and finally clarify the differences between the avalanche gain (which is user-adjustable) and the charge gain (which is not).

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“…The extrinsic doped p-on-n devices using arsenic doping technology that the preparation of p-n junction is realized by using arsenic ion implantation or in-situ doping have higher device performance, because the impurity concentration is controllable and has higher stability, and meanwhile, the influence of Hg vacancy on device performance is eliminated. RVS, TIS, AIM, Lynred (former Sofradir) and BAE have all adopted p-on-n device technology to develop high-performance HgCdTe infrared detectors [16][17][18][19][20][21][22][23][24] .…”

Section: Introductionmentioning

confidence: 99%

High operating temperature HgCdTe mid-wavelength infrared detectors

qin

kong

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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This paper reported the research of mid-wavelength infrared (MWIR) HgCdTe focal plane arrays (FPAs) detector with high operating temperature (HOT) at Kunming Institute of Physics. The fabrication of detector FPAs was based on high-quality in-situ indium-doped HgCdTe films grown by Liquid Phase Epitaxy (LPE). The p-on-n planar junction devices was fabricated by arsenic ion implantation technology. The HgCdTe chip arrays, and column-level ADC digital Silicon readout integrated circuit (ROIC) were interconnected to hybrid FPAs by flip-chip bonding using indium bumps. The compact and low-heat-leakage Dewar was designed and used to package the hybrid FPAs, and then one Integrated Dewar Cooler Assembly (IDCA) was prepared by coupling low-power miniaturized Stirling cryocooler to the Dewar. The dark current, noise equivalent temperature difference (NETD) and operability of the detector at different operating temperatures were tested. The test results indicated that the detector could work at the temperature above 150K.

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RVS large format arrays for astronomy

Cited by 8 publications

References 11 publications

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

Overview of the SAPHIRA detector for adaptive optics applications

High operating temperature HgCdTe mid-wavelength infrared detectors

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