High operating temperature HgCdTe mid-wavelength infrared detectors

Abstract

This paper reported the research of mid-wavelength infrared (MWIR) HgCdTe focal plane arrays (FPAs) detector with high operating temperature (HOT) at Kunming Institute of Physics. The fabrication of detector FPAs was based on high-quality in-situ indium-doped HgCdTe films grown by Liquid Phase Epitaxy (LPE). The p-on-n planar junction devices was fabricated by arsenic ion implantation technology. The HgCdTe chip arrays, and column-level ADC digital Silicon readout integrated circuit (ROIC) were interconnected to hybrid FPAs by flip-chip bonding using indium bumps. The compact and low-heat-leakage Dewar was designed and used to package the hybrid FPAs, and then one Integrated Dewar Cooler Assembly (IDCA) was prepared by coupling low-power miniaturized Stirling cryocooler to the Dewar. The dark current, noise equivalent temperature difference (NETD) and operability of the detector at different operating temperatures were tested. The test results indicated that the detector could work at the temperature above 150K.