Ruthenium Thin Films Grown by Atomic Layer Deposition

Aaltonen, Titta; Alén, Petra; Ritala, Mikko; Leskelä, Markku

doi:10.1002/cvde.200290007

Cited by 271 publications

(275 citation statements)

References 43 publications

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“…where R is the ideal gas constant, Similar behaviors were also observed in ALD Ru film depositions from Ru(thd) 3 , [6] RuCp 2 [4,5] and Ru(EtCp) 2.…”

Section: Resultssupporting

confidence: 70%

“…The cyclopentadienyl (Cp) compounds, such as RuCp 2 and Ru(EtCp) 2 , [2,4,5] and the tris--diketonates (thd) compounds, such as Ru(thd) 3 , [6] have been studied with O 2 as co-reactant. The ruthenium amidinate precursor, bis(N,N'-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl, has been synthesized in our group and used to deposit ruthenium thin films with or without NH 3 as co-reactant.…”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Wang

Gordon

Alvis³

et al. 2009

Chemical Vapor Deposition

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Ruthenium thin films were deposited by atomic layer deposition from bis(N,N'-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O 2 . Highly conductive, dense and pure thin films can be deposited when oxygen exposure O E approaches a certain, the film peels off due to the recombinative desorption of O 2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5at.%) is segregated near the grain boundaries. The atom probe microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries.3

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“…where R is the ideal gas constant, Similar behaviors were also observed in ALD Ru film depositions from Ru(thd) 3 , [6] RuCp 2 [4,5] and Ru(EtCp) 2.…”

Section: Resultssupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Wang

Gordon

Alvis³

et al. 2009

Chemical Vapor Deposition

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“…[34][35][36][37][38] Furthermore, the nature of the precursor ligands does not seem to have a large influence on the lower limit of the temperature window. For Ir ALD for example, high-quality films can be deposited for substrate temperatures above ∼220…”

Section: Discussionmentioning

confidence: 99%

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Erkens

Mackus

Knoops

et al. 2012

ECS J. Solid State Sci. Technol.

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclopentadienyl)trimethylplatinum, (MeCp)PtMe 3 , precursor and O 2 are presented, based on a study of reaction products by time-resolved quadrupole mass spectrometry (QMS) measurements. Above 250 • C, Pt ALD proceeds through unhindered O 2 dissociation at the Pt surface, inducing complete and instantaneous combustion of the precursor ligands. Quantification of the QMS data revealed that at 300 • C, approximately 20% of the C-atoms react during the precursor pulse, forming mainly CH 4 (∼18%) balanced by CO 2 (∼2%). The remaining 80% of the C-atoms are combusted during the O 2 pulse. Time-resolved data indicated that the combustion reactions compete with the hydrogenation reactions for the available surface carbon. Combustion reactions were found to be dominant, provided that a sufficient amount of chemisorbed oxygen is available. When the temperature drops below 250 • C, deposition becomes hindered by the presence of a carbonaceous surface layer of partially fragmented and dehydrogenated precursor ligands, formed during the precursor pulse. The carbonaceous layer limits dissociative chemisorption of O 2 and hence combustion reactions (leading to CO 2 ) whereas reduced surface reactivity also limits (de-)hydrogenation reactions (leading to CH 4 ). Below 100 • C, the carbonaceous layer fully prevents O 2 dissociation and ALD of Pt cannot proceed.

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“…The growth per cycle is 0.5 Å/cycle, which is higher than previously reported for ruthenium ALD. [22][23][24][25][26][27][28] There is an initiation delay of approximately 10 cycles before steady-state ALD of Ru is achieved. This delay is quite low compared to typical noble metal ALD, which often exhibits > 50-100 cycles of initiation delay.…”

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confidence: 99%

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO₂–RuO₂ Alloy Schottky Contacts for Silicon Photoanodes

Hendricks¹,

Scheuermann²,

Schmidt

et al. 2016

ACS Appl. Mater. Interfaces

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Access to the full text of the published version may require a subscription. Embargo information Access to this article is restricted until 12 months after publication by the request of the publisher. Just Accepted "Just Accepted" manuscripts have been peer-reviewed and accepted for publication. They are posted online prior to technical editing, formatting for publication and author proofing. The American Chemical Society provides "Just Accepted" as a free service to the research community to expedite the dissemination of scientific material as soon as possible after acceptance. "Just Accepted" manuscripts appear in full in PDF format accompanied by an HTML abstract. "Just Accepted" manuscripts have been fully peer reviewed, but should not be considered the official version of record. They are accessible to all readers and citable by the Digital Object Identifier (DOI®). "Just Accepted" is an optional service offered to authors. Therefore, the "Just Accepted" Web site may not include all articles that will be published in the journal. After a manuscript is technically edited and formatted, it will be removed from the "Just Accepted" Web site and published as an ASAP article. Note that technical editing may introduce minor changes to the manuscript text and/or graphics which could affect content, and all legal disclaimers and ethical guidelines that apply to the journal pertain. ACS cannot be held responsible for errors or consequences arising from the use of information contained in these "Just Accepted" manuscripts. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 transport is measured as film thickness increases from 3 to 45 nm for alloy compositions ≥ 16% Rights Embargo lift dateRu. Silicon photoanodes with a 2 nm surface SiO 2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% RuO 2 exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO 2 -RuO 2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

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Ruthenium Thin Films Grown by Atomic Layer Deposition

Cited by 271 publications

References 43 publications

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO₂–RuO₂ Alloy Schottky Contacts for Silicon Photoanodes

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Ruthenium Thin Films Grown by Atomic Layer Deposition

Cited by 271 publications

References 43 publications

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2–RuO2 Alloy Schottky Contacts for Silicon Photoanodes

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Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO₂–RuO₂ Alloy Schottky Contacts for Silicon Photoanodes