Ru/GaN(0001) Interface Properties

Abstract

We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. When X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayer, the ultraviolet photoelectron spectroscopy shown a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV. The work function of Ru adlayer is 4.4 eV, while the electron affinity of n-GaN(0001) substrate equals 3.4 eV.

Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

“…The N 2s CL peak is also observed before thermal oxidation, suggesting a dominant nitrogen contribution in XPS measurements. 49 The peak positions agree with previous reports and are summarized in Table 1 with their percentage contributions. 50,51 The ambient exposure of the GaN surface is attributed to the formation of partial Ga 2 O 3 on the surface.…”

“…The deconvoluted spectrum of Ga 3d for GaN/sapphire chemical states is associated with GaN and Ga 2 O 3 peaks at 19.55 and 20.28 eV, respectively, with a percentage contribution of 85.02 and 13.71%, as shown in Figure a. The N 2s CL peak is also observed before thermal oxidation, suggesting a dominant nitrogen contribution in XPS measurements . The peak positions agree with previous reports and are summarized in Table with their percentage contributions. , The ambient exposure of the GaN surface is attributed to the formation of partial Ga 2 O 3 on the surface .…”

Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

“…The fourth component at 17.2 eV is attributed to the N 2s state. The above analysis is consistent with the literature data, 56–59 and the Ga 3d position is typical for n‐type GaN. Moreover, the overlayers are oxides so no further steps of the surface preparation have been carried out to eliminate the residual oxygen.…”

Изменение электронной структуры поверхности GaN/Si(111) при адсорбции Li

“…Электронная структура поверхности GaN широко изучалась в многочисленных экспериментальных и теоретических работах [4][5][6][7][8][9][10]. Исследованы электронные и фотоэмиссионные свойства границ раздела Ru/GaN, Ni/GaN, Pd/GaN, Cs/GaN и Ba/GaN [11][12][13][14][15][16][17][18]. Адсорбция лития была исследована только на N-полярной подложке GaN/SiC/Si(111) [19].…”