Abstract:The electronic structure of the epitaxial GaN/Si(111) layers and the Li/GaN/Si(111) interface with a monolayer Li coverages has been studied in situ under ultrahigh vacuum conditions. The experiments were carried out using photoelectron spectroscopy with synchrotron radiation in the photon energy range 75 eV – 850 eV. The photoemission spectra in the valence band and the core levels of Ga 3d, N 1s, and Li 1s are studied for the monolayer Li coating. It is found that Li adsorption causes a significant decrease … Show more
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